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PDF KP8N65D Data sheet ( Hoja de datos )
| Número de pieza | KP8N65D | |
| Descripción | N CHANNEL MOS FIELD EFFECT TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This Super Junction MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for active power factor
correction and switching mode power supplies.
FEATURES
VDSS=650V, ID=8A
Drain-Source ON Resistance :
RDS(ON)(Max)=0.62 @VGS=10V
Qg(typ.)= 21nC
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
RATING
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
650
30
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
8
5
18*
50
2.3
4.5
78
0.62
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
150
-55 150
Thermal Resistance, Junction-to-Case RthJC
Thermal Resistance,
Junction-to-Ambient
RthJA
* : Drain current limited by maximum junction temperature.
1.6
110
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
PIN CONNECTION
D
KP8N65D/I
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
KP8N65D
A
CD
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
123
O
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
KP8N65I
AH
CJ
M
N
G
FF
123
P
L
1. GATE
2. DRAIN
3. SOURCE
DIM MILLIMETERS
A 6.6+_0.2
B 6.1+_0.2
C 5.34 +_0.3
D 0.7+_0.2
E 9.3 +_0.3
F 2.3+_ 0.2
G 0.76+_0.1
H 2.3+_0.1
J 0.5+_ 0.1
K 1.8 +_ 0.2
L 0.5 +_ 0.1
M 1.0 +_ 0.1
N 0.96 MAX
P 1.02 +_ 0.3
IPAK(1)
G
2013. 11. 22
S
Revision No : 1
1/6
1 page  
KP8N65D/I
Fig12. Gate Charge
ID
Fast
Recovery
Diode
VGS
10 V
0.8 VDSS
1.0 mA
VGS
ID
VDS
Qgs
Qgd
Qg
Fig13. Single Pulsed Avalanche Energy
50V
25Ω
10 V
VGS
BVDSS
L
IAS
VDS
VDD
1
EAS= 2
LIAS2
BVDSS
BVDSS - VDD
ID(t)
Fig14. Resistive Load Switching
0.5 VDSS
25 Ω
10V VGS
tp
VDS
90%
RL
VDS
VGS 10%
td(on) tr
ton
td(off)
tf
toff
Q
VDS(t)
Time
2013. 11. 22
Revision No : 1
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet KP8N65D.PDF ] | |
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