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PDF KU3600N10D Data sheet ( Hoja de datos )
| Número de pieza | KU3600N10D | |
| Descripción | N-Ch Trench MOSFET | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for LED Lighting and
DC/DC Converters.
FEATURES
VDSS(Min.)= 100V, ID= 5A
Drain-Source ON Resistance : RDS(ON)=0.36
Qg(typ.) =4.2nC
(max) @VGS =10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
TC=25
Derate above25
ID
IDP
EAS
EAR
dv/dt
PD
Maximum Junction Temperature
Tj
Storage Temperature Range
Thermal Characteristics
Tstg
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
RthJC
RthJA
RATING
100
20
5
3.1
13
12.4
0.1
4.5
17.4
0.14
150
-55 150
7.2
110
UNIT
V
V
A
mJ
mJ
V/ns
W
W/
/W
/W
KU3600N10D
N CHANNEL TRENCH MOS FIELD
EFFECT TRANSISTOR
A
CD
B
H
G
FF
J
E
K
L
N
M
DIM MILLIMETERS
A 6.60 +_ 0.20
B 6.10 +_0.20
C 5.34 +_ 0.30
D 0.70 +_ 0.20
E 2.70 +_ 0.15
F 2.30 +_ 0.10
G 0.96 MAX
H 0.90 MAX
J 1.80 +_0.20
K 2.30 +_0.10
L 0.50 +_ 0.10
M 0.50 +_0.10
N 0.70 MIN
O 0.1 MAX
123
O
1. GATE
2. DRAIN
3. SOURCE
DPAK (1)
PIN CONNECTION
2014. 9. 12
Revision No : 2
1/6
1 page  
KU3600N10D
Fig12. Gate Charge
0.8 VDSS
VGS
5V
RL
VGS
ID
VDS
Qgs Qgd
Qg
Fig13. Single Pulsed Avalanche Energy
50V
25Ω
10 V
VGS
BVDSS
L
IAS
VDS
VDD
EAS=
1
2
LIAS2
BVDSS
BVDSS - VDD
ID(t)
Fig14. Resistive Load Switching
0.5 VDSS
25 Ω
10V VGS
tp
VDS
90%
RL
VGS 10%
td(off)
VDS td(on) tr
tf
ton toff
Q
VDS(t)
Time
2014. 9. 12
Revision No : 2
5/6
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet KU3600N10D.PDF ] | |
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