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PDF KU086N10F Data sheet ( Hoja de datos )
| Número de pieza | KU086N10F | |
| Descripción | N-Ch Trench MOSFET | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast
switching time, low on resistance, low gate charge and excellent
avalanche characteristics. It is mainly suitable for DC/DC Converter,
Synchronous Rectification and a load switch in battery powered
applications
FEATURES
VDSS= 100V, ID= 95A
Drain-Source ON Resistance :
RDS(ON)=8.6m (Max.) @VGS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
RATING
SYMBOL
UNIT
KU086N10P KU086N10F
Drain-Source Voltage
Gate-Source Voltage
VDSS
VGSS
100 V
20 V
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25
Derate above 25
ID
IDP
EAS
EAR
dv/dt
PD
95 50
60 32.5
400*
570
7.1
4.5
167 50
1.33 0.4
A
mJ
mJ
V/ns
W
W/
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Tj
Tstg
150
-55 ~ 150
Thermal Resistance, Junction-to-Case RthJC
0.75
Thermal Resistance,
Junction-to-Ambient
RthJA
62.5
* : Drain current limited by maximum junction temperature.
2.5
/W
/W
K
KU086N10P/F
N-ch Trench MOS FET
KU086N10P
KU086N10F
PIN CONNECTION
2011. 1. 20
Revision No : 0
1/7
1 page  
KU086N10P/F
2011. 1. 20
Revision No : 0
5/7
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet KU086N10F.PDF ] | |
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