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KML0D4P20E fiches techniques PDF

KEC - P-Ch Trench MOSFET

Numéro de référence KML0D4P20E
Description P-Ch Trench MOSFET
Fabricant KEC 
Logo KEC 





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KML0D4P20E fiche technique
SEMICONDUCTOR
TECHNICAL DATA
General Description
It s Mainly Suitable for Load Switching Mobile Phones, Battery Powered
Systems and Level-Shifter.
FEATURES
VDSS= -20V, ID= -0.35A
Drain-Soure ON Resistance
: RDS(ON)=1.2 @ VGS= -4.5V
: RDS(ON)=1.6 @ VGS= -2.5V
: RDS(ON)=2.7 @ VGS= -1.8V
ESD Protection diode.
KML0D4P20E
P-Ch Trench MOSFET
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL P-Ch UNIT
Drain-Source Voltage
Gate-Source Voltage
VDSS -20 V
VGSS
6V
Drain Current
DC @TA=25
DC @TA=85
Pulsed
(Note 1)
(Note 1)
(Note 1)
ID
IDP
-350
-255
-1400
mA
Drain Power Dissipation
(Note 2) PD
210 mW
Maximum Junction Temperature
Storage Temperature Range
Tj 150
Tstg -55 150
Thermal Resistance, Junction to Ambient (Note 2) RthJA
Note 1) Drain current limited by maximum junction temperature
Note 2) Surface Mounted on 1 1 FR4 Board
600
/W
2015. 1. 15
Revision No : 2
1/4

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