(PDF) KML0D4N20V Datasheet - N-Ch Trench MOSFET

Número de pieza	KML0D4N20V
Descripción	N-Ch Trench MOSFET
Fabricantes	KEC
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No Preview Available ! SEMICONDUCTOR TECHNICAL DATA General Description It s mainly suitable for Load Switching Cell Phones, Battery Powered Systems and Level-Shifter. FEATURES VDSS=20V, ID=0.4A Drain-Soure ON Resistance : RDS(ON)=0.70 @ VGS=4.5V : RDS(ON)=0.85 @ VGS=2.5V : RDS(ON)=1.25 @ VGS=1.8V Super High Dense Cell Design KML0D4N20V N-Ch Trench MOSFET MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL N-Ch Drain-Source Voltage Gate-Source Voltage Drain Current DC @TA=25 DC @TA=85 Pulsed Source-Drain Diode Current Drain Power Dissipation Maximum Junction Temperature Storage Temperature Range VDSS VGSS ID* IDP IS PD* Tj Tstg 20 6 400 280 650 125 150 150 -55 150 Note 1) *Surface Mounted on 1 1 FR4 Board. t 5 sec UNIT V V mA mW 2014. 8. 05 Revision No : 1 1/4 1 page

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PDF KML0D4N20V Data sheet ( Hoja de datos )