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KEC - Dual N-Ch Trench MOSFET

Numéro de référence KMB6D0DN30QB
Description Dual N-Ch Trench MOSFET
Fabricant KEC 
Logo KEC 





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KMB6D0DN30QB fiche technique
SEMICONDUCTOR
TECHNICAL DATA
GENERAL DESCRIPTION
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for portable equipment and DC-DC
Converter Applications.
FEATURES
VDSS=30V, ID=6A.
Drain-Source ON Resistance.
RDS(ON)=28m (Max.) @VGS=10V
RDS(ON)=42m (Max.) @VGS=4.5V
Super High Dense Cell Design
High Power and Current Handing Capability
MAXIMUM RATING (Ta=25 Unless otherwise noted)
CHARACTERISTIC
SYMBOL PATING
Drain Source Voltage
VDSS
30
Gate Source Voltage
Drain Current
DC
Pulsed
Drain Source Diode Forward Current
VGSS
ID *
IDP
IS
20
6
30
1.7
Drain Power Dissipation
25
PD * 2
Maximum Junction Temperature
Tj 150
Storage Temperature Range
Tstg -50~150
Thermal Resistance, Junction to Ambient
RthJA*
62.5
Note> *Surface Mounted on FR4 Board, t 10sec.
UNIT
V
V
A
A
A
W
/W
KMB6D0DN30QB
Dual N-Ch Trench MOSFET
DP
H
T
G
U
L
A
DIM MILLIMETERS
A 4.85+_ 0.2
85
B1 3.94+_ 0.2
B2 6.02+_ 0.3
B1 B2
D 0.4+_ 0.1
G 0.15+0.1/-0.05
14
H 1.63+_ 0.2
L 0.65+_ 0.2
P 1.27
T 0.20+0.1/-0.05
U 0.1 MAX
FLP-8
KMB6D0DN
30QB
PIN CONNECTION (TOP VIEW)
S1 1
G1 2
S2 3
G2 4
8 D1
7 D1
6 D2
5 D2
1
2
3
4
8
7
6
5
2011. 8. 30
Revision No : 0
1/5

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