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KMB3D5N40SA fiches techniques PDF

KEC - N-Ch Trench MOSFET

Numéro de référence KMB3D5N40SA
Description N-Ch Trench MOSFET
Fabricant KEC 
Logo KEC 





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KMB3D5N40SA fiche technique
SEMICONDUCTOR
TECHNICAL DATA
General Description
This Trench MOSFET has better characteristics, such as fast switching
time, low on resistance, low gate charge and excellent avalanche
characteristics. It is mainly suitable for Load switch and Back-Light
Inverter.
FEATURES
VDSS=40V, ID=3.5A
Drain-Source ON Resistance
RDS(ON)=45m (Max.) @ VGS=10V
RDS(ON)=62m (Max.) @ VGS=4.5V
Super High Dense Cell Design
KMB3D5N40SA
N-Ch Trench MOSFET
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
Q K 0.00 ~ 0.10
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
DC@Ta=25
Drain Current
DC@Ta=70
Pulsed
Drain-Source-Diode Forward Current
Drain Power Dissipation
Ta=25
Ta=70
Maximum Junction Temperature
Storage Temperature Range
Thermal Resistance, Junction to Ambient
Note > *Surface Mounted on 1” 1” FR4 Board, t
SYMBOL N-Ch
VDSS
VGSS
40
20
3.5
ID
2.8
IDP 14
IS 1.0
1.25
PD
0.8
Tj 150
Tstg -55 150
RthJA
5sec
100
UNIT
V
V
A
A
W
/W
PIN CONNECTION (TOP VIEW)
D
3
3
2
G
2013. 11. 08
1 21
S
Revision No : 1
SOT-23
MA1
1/5

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