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Numéro de référence | KMA2D4P20SA | ||
Description | P-Ch Trench MOSFET | ||
Fabricant | KEC | ||
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1 Page
SEMICONDUCTOR
TECHNICAL DATA
General Description
It s mainly suitable for use as a load switch in battery powered applications.
KMA2D4P20SA
P-Ch Trench MOSFET
FEATURES
VDSS=-20V, ID=-2.4A.
Drain to Source on-state Resistance.
: RDS(ON)=100m (Max.) @ VGS=-4.5V.
: RDS(ON)=175m (Max.) @ VGS=-2.5V.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING UNIT
Drain to Source Voltage
VDSS
-20
V
Gate to Source Voltage
VGSS
12 V
Drain Current
DC@Ta=25 (Note1) ID -2.4
A
Pulsed
(Note1)
IDP
-9
Ta=25
Drain Power Dissipation
Ta=100
(Note1)
(Note1)
1.25
PD W
0.6
Maximum Junction Temperature
Storage Temperature Range
Tj 150
Tstg -55 150
Thermal Resistance, Junction to Ambient (Note1) RthJA
Note1)Surface Mounted on 1 1 FR4 Board, t 5sec.
100
/W
E
L BL
DIM MILLIMETERS
A 2.93+_ 0.20
B 1.30+0.20/-0.15
23
C 1.30 MAX
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
1 G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
Q
PP
L 0.55
M 0.20 MIN
N 1.00+0.20/-0.10
P7
Q 0.1 MAX
M
SOT-23
Marking
KB2Type Name
Lot No.
PIN CONNECTION (TOP VIEW)
D
3
3
21
GS
21
2011. 12. 22
Revision No : 3
1/4
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Pages | Pages 4 | ||
Télécharger | [ KMA2D4P20SA ] |
No | Description détaillée | Fabricant |
KMA2D4P20S | P-Ch Trench MOSFET | KEC |
KMA2D4P20SA | P-Ch Trench MOSFET | KEC |
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