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PDF KTD1691 Data sheet ( Hoja de datos )
| Número de pieza | KTD1691 | |
| Descripción | EPITAXIAL PLANAR NPN TRANSISTOR | |
| Fabricantes | KEC | |
| Logotipo |  |
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SEMICONDUCTOR
TECHNICAL DATA
LOW COLLECTOR SATURATION VOLTAGE
LARGE CURRENT
FEATURES
High Power Dissipation : PC=1.5W(Ta=25
Complementary to KTB1151.
)
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
DC
Pulse *
Base Current
VCBO
VCEO
VEBO
IC
ICP
IB
Collector Power
Dissipation
Ta=25
Tc=25
PC
Junction Temperature
Tj
Storage Temperature Range
Tstg
* PW 10ms, Duty Cycle 50%
RATING
60
60
7
5
8
1
1.5
20
150
-55 150
UNIT
V
V
V
A
A
W
KTD1691
EPITAXIAL PLANAR NPN TRANSISTOR
A
B
C
H
J
K
D
E
F
G
L
M
N
O
P
12 3
1. EMITTER
2. COLLECTOR
3. BASE
DIM
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
MILLIMETERS
8.3 MAX
5.8
0.7
Φ3.2+_ 0.1
3.5
11.0 +_ 0.3
2.9 MAX
1.0 MAX
1.9 MAX
0.75 +_ 0.15
15.50+_ 0.5
2.3 +_ 0.1
0.65 +_ 0.15
1.6
3.4 MAX
TO-126
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
*
Collector-Emitter Saturation Voltage *
Base-Emitter Saturation Voltage *
ICBO
IEBO
hFE 1
hFE2 (Note)
hFE 3
VCE(sat)
VBE(sat)
TEST CONDITION
VCB=50V, IE=0
VEB=7V, IC=0
VCE=1V, IC=0.1A
VCE=1V, IC=2A
VCE=2V, IC=5A
IC=2A, IB=0.2A
IC=2A, IB=0.2A
Switching
Time
Turn On Time
Storage Time
ton 20µsec
INPUT IB1
tstg
IB1
IB2 IB2
Fall Time
tf
IB1=-I B2 =0.2A
DUTY CYCLE <= 1%
* Pulse test : PW 50 S, Duty Cycle 2% Pulse
Note) hFE(2) Classification : O:160 320, Y:200 400.
OUTPUT
VCC =10V
MIN.
-
-
60
160
50
-
-
-
TYP.
-
-
-
-
-
0.1
0.9
MAX.
10
10
-
400
-
0.3
1.2
UNIT
A
A
V
V
0.2 1
- 1.1 2.5
S
- 0.2 1
2003. 7. 24
Revision No : 3
1/3
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet KTD1691.PDF ] | |
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