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Numéro de référence | KTA1021 | ||
Description | EPITAXIAL PLANAR PNP TRANSISTOR | ||
Fabricant | KEC | ||
Logo | |||
SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION.
SWITCHING APPLICATION.
FEATURES
ᴌExcellent hFE Linearity.
: hFE(2)=25(Min.) at VCE=-6V, IC=-400mA
ᴌ1 Watt Amplifier Application.
ᴌComplementary to KTC1020.
MAXIMUM RATING (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Storage Temperature Range
Tstg
RATING
-35
-30
-5
-500
-100
400
150
-55ᴕ150
UNIT
V
V
V
mA
mA
mW
ᴱ
ᴱ
KTA1021
EPITAXIAL PLANAR PNP TRANSISTOR
B
HM
C
EE
1 2 3N
L
1. EMITTER
2. COLLECTOR
3. BASE
O DIM MILLIMETERS
A 3.20 MAX
B 4.30 MAX
C 0.55 MAX
D 2.40+_ 0.15
E 1.27
F 2.30
G 14.00+_ 0.50
H 0.60 MAX
J 1.05
K 1.45
L 25
M 0.80
N 0.55 MAX
O 0.75
TO-92M
ELECTRICAL CHARACTERISTICS (Ta=25ᴱ)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Transition Frequency
ICBO
IEBO
hFE
VCE(sat)
VBE
fT
Collector Output Capacitance
Cob
TEST CONDITION
VCB=-35V, IE=0
VEB=-5V, IC=0
VCE=-1V, IC=-100mA
IC=-100mA, IB=-10mA
VCE=-1V, IC=-100mA
VCE=-6V, IC=-20mA
VCB=-6V, IE=0, f=1MHz
MIN.
-
-
100
-
-
-
-
TYP.
-
-
-
-0.1
-0.8
200
13
MAX.
-0.1
-0.1
240
-0.25
-1.0
-
-
UNIT
ỌA
ỌA
V
V
MHz
pF
1994. 3. 21
Revision No : 0
1/2
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Pages | Pages 2 | ||
Télécharger | [ KTA1021 ] |
No | Description détaillée | Fabricant |
KTA1021 | EPITAXIAL PLANAR PNP TRANSISTOR | KEC |
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