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PDF 3N80C Data sheet ( Hoja de datos )
| Número de pieza | 3N80C | |
| Descripción | FQP3N80C | |
| Fabricantes | Fairchild Semiconductor | |
| Logotipo |  |
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FQP3N80C / FQPF3N80C
N-Channel QFET® MOSFET
800 V, 3.0 A, 4.8
Features
• 3.0 A, 800 V, RDS(on) = 4.8 Ω (Max.) @ VGS = 10 V,
ID = 1.5 A
• Low Gate Charge (Typ. 13 nC)
• Low Crss (Typ. 5.5 pF)
• 100% Avalanche Tested
June 2014
Description
This N-Channel enhancement mode power MOSFET is pro-
duced using Fairchild Semiconductor’s proprietary planar stripe
and DMOS technology. This advanced MOSFET technology
has been especially tailored to reduce on-state resistance, and
to provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and elec-
tronic lamp ballasts.
D
GDS
TO-220
GDS TO-220F
G
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
Parameter
Drain to Source Voltage
Drain Current
Drain Current
-Continuous (TC = 25oC)
-Continuous (TC = 100oC)
- Pulsed
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
(TC = 25oC)
- Derate above 25oC
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature.
Thermal Characteristics
Symbol
RJC
RJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
FQP3N80C
FQPF3N80C
800
3 3*
1.9 1.9 *
12 12 *
30
320
3
10.7
4.5
107 39
0.85 0.31
-55 to +150
300
FQP3N80C
1.17
62.5
FQPF3N80C
3.2
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FQP3N80C / FQPF3N80C Rev. C2
1
www.fairchildsemi.com
1 page  
Typical Characteristics (Continued)
100
D =0.5
0 .2
1 0 -1
0 .1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
sin g le p u lse
※ N otes :
1.
2.
3.
ZDθu JtCy(
TJM -
t) = 1.17 ℃ /W M
Fa
TC
ct
=
o r,
PD
MD*=Zt 1θ/
t
2
JC
(
t
a
)
x
.
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S quare W ave P ulse D uration [sec]
101
Figure 11-1. Transient Thermal Response Curve for FQP3N80C
D = 0.5
100
0 .2
0 .1
0 .0 5
1 0 -1
0 .0 2
0 .0 1
1 0 -2
1 0 -5
※ N otes :
1.
2.
3.
Z
D
T
θu JtCy(
JM -
t) = 3.2
F a c to r,
TC = PD
℃ /W
MD*=Zt1θ/
t
M ax
2
JC
(
t
)
.
sin g le p ulse
PDM
t1
t2
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
t1, S quare W ave P ulse D uration [sec]
101
Figure 11-2. Transient Thermal Response Curve for FQPF3N80C
©2003 Fairchild Semiconductor Corporation
FQP3N80C / FQPF3N80C Rev. C2
5
www.fairchildsemi.com
5 Page | ||
| Páginas | Total 10 Páginas | |
| PDF Descargar | [ Datasheet 3N80C.PDF ] | |
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