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Numéro de référence | EMA06N03AN | ||
Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor | ||
Fabricant | Excelliance MOS | ||
Logo | |||
1 Page
N‐Channel Logic Level Enhancement Mode Field Effect Transistor
Product Summary:
BVDSS
25V
D
RDSON (MAX.)
6mΩ
ID 80A G
UIS, Rg 100% Tested
S
Pb‐Free Lead Plating & Halogen Free
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS
SYMBOL
EMA06N03AN
LIMITS
UNIT
Gate‐Source Voltage
Continuous Drain Current
Pulsed Drain Current1
TC = 25 °C
TC = 100 °C
Avalanche Current
Avalanche Energy
L = 0.1mH, ID=53A, RG=25Ω
Repetitive Avalanche Energy2
L = 0.05mH
Power Dissipation
TC = 25 °C
TC = 100 °C
Operating Junction & Storage Temperature Range
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
±20
80
50
170
53
140
40
69
27
‐55 to 150
V
A
mJ
W
°C
100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=40A, Rated VDS=25V N‐CH
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL
TYPICAL
MAXIMUM
UNIT
Junction‐to‐Case
RJC
Junction‐to‐Ambient
RJA
1Pulse width limited by maximum junction temperature.
2Duty cycle 1%
1.8
°C / W
75
2013/8/21
p.1
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Pages | Pages 6 | ||
Télécharger | [ EMA06N03AN ] |
No | Description détaillée | Fabricant |
EMA06N03AN | N-Channel Logic Level Enhancement Mode Field Effect Transistor | Excelliance MOS |
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