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Numéro de référence | 3DD208 | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD208
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.)
·DC Current Gain-
: hFE= 30~250(Min.)@IC= 0.5A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max)@ IC= 1A
APPLICATIONS
·Designed for switching regulator and power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
300 V
VCEO Collector-Emitter Voltage
200 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
3A
PC Collector Power Dissipation@TC=25℃ 50
W
TJ Junction Temperature
150 ℃
Tstg Storage Temperature
-55~150 ℃
isc website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ 3DD208 ] |
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