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Inchange Semiconductor - Silicon NPN Power Transistor

Numéro de référence 3DD208
Description Silicon NPN Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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3DD208 fiche technique
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD208
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 200V(Min.)
·DC Current Gain-
: hFE= 30~250(Min.)@IC= 0.5A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 2.0V(Max)@ IC= 1A
APPLICATIONS
·Designed for switching regulator and power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
300 V
VCEO Collector-Emitter Voltage
200 V
VEBO
Emitter-Base Voltage
6V
IC Collector Current-Continuous
3A
PC Collector Power Dissipation@TC=2550
W
TJ Junction Temperature
150
Tstg Storage Temperature
-55~150
isc websitewww.iscsemi.cn
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