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Numéro de référence | 3DD101B | ||
Description | Silicon NPN Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
3DD101B
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 150V(Min.)
·DC Current Gain-
: hFE= 20(Min.)@IC= 2A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= 0.8V(Max)@ IC= 2.5A
APPLICATIONS
·Designed for power amplifier,DC-DC converter and regulated
power supply applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
200 V
VCEO Collector-Emitter Voltage
150 V
VEBO
Emitter-Base Voltage
4V
IC Collector Current-Continuous
5A
PC Collector Power Dissipation@TC=75℃ 50
W
TJ Junction Temperature
175 ℃
Tstg Storage Temperature
-55~175 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX UNIT
2.0 ℃/W
isc website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ 3DD101B ] |
No | Description détaillée | Fabricant |
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3DD101 | (3DD101 / 3DD102) NPN | ETC |
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3DD101A | (3DD101 / 3DD102) NPN | ETC |
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