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PDF 2SB955 Data sheet ( Hoja de datos )
| Número de pieza | 2SB955 | |
| Descripción | Silicon PNP Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB955
DESCRIPTION
·High DC Current Gain-
: hFE = 1000(Min)@ IC= -5A
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = -120V(Min)
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -5A
·Complement to Type 2SD1126
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO
Emitter-Base Voltage
-7 V
IC Collector Current-Continuous
-10 A
ICM Collector Current-Peak
PC
Collector Power Dissipation
TC=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
-15 A
50 W
150 ℃
-55~150 ℃
isc website：www.iscsemi.cn
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1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB955.PDF ] | |
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