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PDF 2SB881 Data sheet ( Hoja de datos )
| Número de pieza | 2SB881 | |
| Descripción | Silicon PNP Power Transistor | |
| Fabricantes | Inchange Semiconductor | |
| Logotipo |  |
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INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB881
DESCRIPTION
·High DC Current Gain-
: hFE = 2000(Min)@ IC= -3.5A
·Wide Area of Safe Operation
·Low Collector-Emitter Saturation Voltage-
: VCE(sat) = -1.5V(Max)@ IC= -3.5A
·Complement to Type 2SD1191
APPLICATIONS
·Designed for motor drivers, printer hammer drivers, relay
drivers, voltage regulators applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-70 V
VCEO
Collector-Emitter Voltage
-60 V
VEBO
Emitter-Base Voltage
-6 V
IC Collector Current-Continuous
-7 A
ICM Collector Current-Peak
Collector Power Dissipation
TC=25℃
PC
Collector Power Dissipation
Ta=25℃
Tj Junction Temperature
Tstg Storage Temperature Range
-10 A
35
W
1.75
150 ℃
-55~150 ℃
isc Website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
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| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 2SB881.PDF ] | |
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