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Numéro de référence | 2SB1531 | ||
Description | Silicon PNP Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB1531
DESCRIPTION
·High DC Current Gain-
: hFE= 5000(Min)@IC= -5A
·Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@IC= -5A
·Complement to Type 2SD2340
APPLICATIONS
·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-130
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
Collector Power Dissipation
@ TC=25℃
PC
Collector Power Dissipation
@ Ta=25℃
TJ Junction Temperature
Tstg Storage Temperature Range
-6 A
50
W
3
150 ℃
-55~150 ℃
isc Website:www.iscsemi.cn 1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ 2SB1531 ] |
No | Description détaillée | Fabricant |
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