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2SB1531 fiches techniques PDF

Inchange Semiconductor - Silicon PNP Power Transistor

Numéro de référence 2SB1531
Description Silicon PNP Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SB1531 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Darlington Power Transistor
isc Product Specification
2SB1531
DESCRIPTION
·High DC Current Gain-
: hFE= 5000(Min)@IC= -5A
·Low-Collector Saturation Voltage-
: VCE(sat)= -2.5V(Max.)@IC= -5A
·Complement to Type 2SD2340
APPLICATIONS
·Designed for power amplifier applications
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-130
V
VCEO
Collector-Emitter Voltage
-130
V
VEBO
Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
Collector Power Dissipation
@ TC=25
PC
Collector Power Dissipation
@ Ta=25
TJ Junction Temperature
Tstg Storage Temperature Range
-6 A
50
W
3
150
-55~150
isc Websitewww.iscsemi.cn 1 isc & iscsemi is registered trademark

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