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Numéro de référence | 2SA651 | ||
Description | Silicon PNP Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
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1 Page
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA651
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-200
V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25℃
Tj Junction Temperature
Tstg Storage Temperature
-150
V
-5 V
-10 A
100 W
150 ℃
-55~150 ℃
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ 2SA651 ] |
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