DataSheetWiki


2SA651 fiches techniques PDF

Inchange Semiconductor - Silicon PNP Power Transistor

Numéro de référence 2SA651
Description Silicon PNP Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





1 Page

No Preview Available !





2SA651 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA651
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -150V(Min.)
·Wide Area of Safe Operation
APPLICATIONS
·Designed for audio power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-200
V
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC Collector Current-Continuous
PC
Collector Power Dissipation
@TC=25
Tj Junction Temperature
Tstg Storage Temperature
-150
V
-5 V
-10 A
100 W
150
-55~150
isc websitewww.iscsemi.cn
1 isc & iscsemi is registered trademark

PagesPages 2
Télécharger [ 2SA651 ]


Fiche technique recommandé

No Description détaillée Fabricant
2SA650 Silicon POwer Transistors SavantIC
SavantIC
2SA650 POWER TRANSISTOR Inchange Semiconductor
Inchange Semiconductor
2SA651 Silicon PNP Power Transistor Inchange Semiconductor
Inchange Semiconductor
2SA651 Trans GP BJT PNP 25V 1A 3-Pin TO-92L-A1 New Jersey Semiconductor
New Jersey Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche