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Numéro de référence | 2SA1082 | ||
Description | Silicon PNP Power Transistor | ||
Fabricant | Inchange Semiconductor | ||
Logo | |||
INCHANGE Semiconductor
isc Silicon PNP Transistor
isc RF Product Specification
2SA1082
DESCRIPTION
·High Voltage
APPLICATIONS
·Design For Amplifier and general purpose applications
.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-100 mA
PD
Collector Power Dissipation@TA=25℃ 400
mW
TJ Junction Temperature
150 ℃
Tstg Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a Thermal Resistance,Junction to Ambient
MAX
312
UNIT
℃/W
isc website:www.iscsemi.cn
1 isc & iscsemi is registered trademark
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Pages | Pages 2 | ||
Télécharger | [ 2SA1082 ] |
No | Description détaillée | Fabricant |
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