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2SA1082 fiches techniques PDF

Inchange Semiconductor - Silicon PNP Power Transistor

Numéro de référence 2SA1082
Description Silicon PNP Power Transistor
Fabricant Inchange Semiconductor 
Logo Inchange Semiconductor 





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2SA1082 fiche technique
INCHANGE Semiconductor
isc Silicon PNP Transistor
isc RF Product Specification
2SA1082
DESCRIPTION
·High Voltage
APPLICATIONS
·Design For Amplifier and general purpose applications
.
ABSOLUTE MAXIMUM RATINGS(Ta=25)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO Emitter-Base Voltage
-5 V
IC Collector Current-Continuous
-100 mA
PD
Collector Power Dissipation@TA=25400
mW
TJ Junction Temperature
150
Tstg Storage Temperature Range
-55~150
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a Thermal Resistance,Junction to Ambient
MAX
312
UNIT
/W
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