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Numéro de référence | TGL60N100ND1 | ||
Description | NPT trench IGBT | ||
Fabricant | TRinno | ||
Logo | |||
Features:
• 1000V NPT Trench Technology
• High Speed Switching
• Low Conduction Loss
• Positive Temperature Coefficient
• Easy parallel Operation
• RoHS compliant
• JEDEC Qualification
Applications :
Induction Heating, Soft switching application
TGL60N100ND1
NPT trench IGBT
GC E
Device
TGL60N100ND1
Package
TO-264
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Current
Pulsed Collector Current (Note 1)
Diode Continuous Forward Current
Power Dissipation
Operating Junction Temperature
TC = 25 ℃
TC = 100 ℃
TC = 100 ℃
TC = 25 ℃
TC = 100 ℃
Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Marking
TGL60N100ND1
Symbol
VCES
VGES
Ic
ICM
IF
PD
TJ
TSTG
TL
Value
1000
±20
60
42
120
15
463
185
-55 ~ 150
-55 ~ 150
300
Notes :
(1) Repetitive rating : Pulse width limited by max junction temperature
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT)
RθJC (DIODE)
RθJA
Aug. 2012 : Rev1
www.trinnotech.com
Value
0.27
1.59
25
Remark
RoHS
Unit
V
V
A
A
A
A
W
W
℃
℃
℃
Unit
℃/W
℃/W
℃/W
1/8
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Pages | Pages 8 | ||
Télécharger | [ TGL60N100ND1 ] |
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