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TGL60N100ND1 fiches techniques PDF

TRinno - NPT trench IGBT

Numéro de référence TGL60N100ND1
Description NPT trench IGBT
Fabricant TRinno 
Logo TRinno 





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TGL60N100ND1 fiche technique
Features:
1000V NPT Trench Technology
High Speed Switching
Low Conduction Loss
Positive Temperature Coefficient
Easy parallel Operation
RoHS compliant
JEDEC Qualification
Applications :
Induction Heating, Soft switching application
TGL60N100ND1
NPT trench IGBT
GC E
Device
TGL60N100ND1
Package
TO-264
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Current
Pulsed Collector Current (Note 1)
Diode Continuous Forward Current
Power Dissipation
Operating Junction Temperature
TC = 25
TC = 100
TC = 100
TC = 25
TC = 100
Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Marking
TGL60N100ND1
Symbol
VCES
VGES
Ic
ICM
IF
PD
TJ
TSTG
TL
Value
1000
±20
60
42
120
15
463
185
-55 ~ 150
-55 ~ 150
300
Notes :
(1) Repetitive rating : Pulse width limited by max junction temperature
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT)
RθJC (DIODE)
RθJA
Aug. 2012 : Rev1
www.trinnotech.com
Value
0.27
1.59
25
Remark
RoHS
Unit
V
V
A
A
A
A
W
W
Unit
/W
/W
/W
1/8

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