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TGAN30N120FD fiches techniques PDF

TRinno - Field Stop Trench IGBT

Numéro de référence TGAN30N120FD
Description Field Stop Trench IGBT
Fabricant TRinno 
Logo TRinno 





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TGAN30N120FD fiche technique
Features:
1200V Field Stop Trench Technology
High Speed Switching
Low Conduction Loss
Positive Temperature Coefficient
Easy parallel Operation
RoHS compliant
JEDEC Qualification
Applications :
Induction Heating, Soft switching application
TGAN30N120FD
Field Stop Trench IGBT
E
GC
Device
TGAN30N120FD
Package
TO-3PN
Marking
TGAN30N120FD
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current (Note 1)
TC = 25
TC = 100
Diode Continuous Forward Current
Diode Maximum Forward Current
TC = 100
Power Dissipation
TC = 25
TC = 100
Operating Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Symbol
VCES
VGES
Ic
ICM
IF
IFM
PD
TJ
TSTG
TL
Notes :
(1) Repetitive rating : Pulse width limited by maximum junction temperature
Value
1200
±20
60
30
90
30
90
329
132
-55 ~ 150
-55 ~ 150
300
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT)
RθJC (DIODE)
RθJA
Value
0.38
2.1
40
Oct. 2013 : Rev1.1
www.trinnotech.com
Remark
RoHS
Unit
V
V
A
A
A
A
A
W
W
Unit
/W
/W
/W
1/8

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