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PDF TGH40N120FD Data sheet ( Hoja de datos )
| Número de pieza | TGH40N120FD | |
| Descripción | Field Stop Trench IGBT | |
| Fabricantes | TRinno | |
| Logotipo |  |
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TGH40N120FD
Field Stop Trench IGBT
Features
• 1200V Field Stop Trench Technology
• High Speed Switching
• Low Conduction Loss
• Positive Temperature Coefficient
• Easy Parallel Operation
• RoHS Compliant
• JEDEC Qualification
Applications
GC E
Induction Heating, Soft switching application, UPS, Welder, Inverter
Device
TGH40N120FD
Package
TO-247
Marking
TGH40N120FD
Absolute Maximum Ratings
Parameter
Collector-Emitter Voltage
Gate-Emitter Voltage
Continuous Collector Current
Pulsed Collector Current (Note 1)
TC = 25 ℃
TC = 100 ℃
Diode Continuous Forward Current
Diode Maximum Forward Current
TC = 100 ℃
Power Dissipation
TC = 25 ℃
TC = 100 ℃
Operating Junction Temperature
Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
Symbol
VCES
VGES
Ic
ICM
IF
IFM
PD
TJ
TSTG
TL
Notes :
(1) Repetitive rating : Pulse width limited by maximum junction temperature
Value
1200
±20
80
40
160
40
160
480
192
-55 ~ 150
-55 ~ 150
300
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
Symbol
RθJC (IGBT)
RθJC (DIODE)
RθJA
Value
0.26
0.95
40
August 2015 : Rev0.0
www.trinnotech.com
Remark
RoHS
Unit
V
V
A
A
A
A
A
W
W
℃
℃
℃
Unit
℃/W
℃/W
℃/W
1/8
1 page  
IGBT Characteristics
Fig. 7 Turn-on time vs. gate resistor
1000
TGH40N120FD
Field Stop Trench IGBT
Fig. 8 Turn-off time vs. gate resistor
1000
Common Emitter
V = 600V, V = 15V, I = 40A
CC GE C
T = 25oC
C
T = 125oC
C
t
d(off)
100 t
r
t
d(on)
10
0 10
Common Emitter
V = 600V, V = 15V, I = 40A
CC GE C
T = 25oC
C
T = 125oC
C
20 30 40 50 60 70
Gate Resistor, R []
G
t
f
100
10
0 10 20 30 40 50 60 70
Gate Resistor, R []
G
Fig. 9 Switching loss vs. gate resistor
10000
E
ON
E
OFF
1000
0
Common Emitter
V = 600V, V = 15V, I = 40A
CC GE C
T = 25oC
C
T = 125oC
C
10 20 30 40 50 60 70
Gate Resistor, R []
G
Fig. 10 Turn-on time vs. collector current
1000
Common Emitter
V = 600V, V = 15V, R = 5
CC GE G
T = 25oC
C
T = 125oC
C
t
r
100
t
d(on)
10
20
30 40 50 60 70
Collector Current, I [A]
C
80
Fig. 11 Turn-off time vs. collector current
1000
Fig. 12 Switching loss vs. collector current
100
10000
t
d(off)
t
f
1000
Common Emitter
V = 600V, V = 15V, R = 5
CC GE G
T = 25oC
C
T = 125oC
C
10
20 30 40 50 60 70 80
100
20
Collector Current, I [A]
C
August 2015 : Rev0.0
www.trinnotech.com
E
ON
E
OFF
Common Emitter
V = 600V, V = 15V, R = 5
CC GE G
T = 25oC
C
T = 125oC
C
30 40 50 60 70
Collector Current, I [A]
C
80
5/8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet TGH40N120FD.PDF ] | |
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