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Numéro de référence | A1002 | ||
Description | Silicon PNP Power Transistor | ||
Fabricant | INCHANGE | ||
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INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification
2SA1002
DESCRIPTION
·High Current Capability
·CollectorEmitter Breakdown Voltage
: V(BR)CEO= 120V(Min.)
APPLICATIONS
·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO CollectorBase Voltage
120
V
VCEO CollectorEmitter Voltage
120
V
VEBO EmitterBase Voltage
6 V
IC Collector CurrentContinuous
Collector Power Dissipation
PC @TC=25℃
Tj Junction Temperature
Tstg Storage Temperature
12 A
120 W
150 ℃
55~150 ℃
isc website:www.iscsemi.cn
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Pages | Pages 2 | ||
Télécharger | [ A1002 ] |
No | Description détaillée | Fabricant |
A1002 | Silicon PNP Power Transistor | INCHANGE |
A1002 | PNP Transistor - 2SA1002 | New Jersey Semiconductor |
A1006 | PNP Transistor - 2SA1006 | SavantIC |
A1008 | PNP Transistor - 2SA1008 | SavantIC |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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