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Numéro de référence | DG6N60 | ||
Description | N-CHANNEL ENHANCEMENT MODE MOSFET | ||
Fabricant | JiangSu Dongchen Electronics | ||
Logo | |||
江苏东晨电子科技有限公司
JiangSu Dongchen Electronics Technology Co.,Ltd
DG6N60
N 沟道增强型场效应晶体管
N-CHANNEL ENHANCEMENT MODE MOSFET
版本号
201603-A
产品概述 General Description
DG6N60是N沟道增强型场效应晶体管,应用了东晨电子的相关专利技术,采用自对准平面工艺及先进的
终端耐压技术,降低了导通损耗,提高了开关特性,增强了雪崩耐量。该产品能应用于多种功率开关电
路,使得电源能效更高,系统更加小型化。
DG6N60 is an N-channel enhancement mode MOSFET, which is produced using Dongchen Electronics’s
proprietary. The self-aligned planar process and improved terminal technology reduce the conduction loss, improve
switching performance and enhance the avalanche energy. The transistor can be used in various power switching
circuit for higher efficiency and system miniaturization.
主要参数 MAIN CHARACTERISTICS
VDSS
ID
RDS(ON)
Crss
600
6.0
1.5
11
V
A
Ω
pF
符号 Symbol
封装 Package
86-510-87136806
1 /13
http://www.jsdgme.com
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Pages | Pages 13 | ||
Télécharger | [ DG6N60 ] |
No | Description détaillée | Fabricant |
DG6N60 | N-CHANNEL ENHANCEMENT MODE MOSFET | DGME |
DG6N60 | N-CHANNEL ENHANCEMENT MODE MOSFET | JiangSu Dongchen Electronics |
DG6N65 | N-CHANNEL ENHANCEMENT MODE MOSFET | DGME |
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www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |