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Fairchild Semiconductor - N-Channel PowerTrench MOSFET

Numéro de référence FDS8978
Description N-Channel PowerTrench MOSFET
Fabricant Fairchild Semiconductor 
Logo Fairchild Semiconductor 





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FDS8978 fiche technique
FDS8978
N-Channel PowerTrench® MOSFET
30V, 7.5A, 18m
January 2011
Features
„ rDS(on) = 18m, VGS = 10V, ID = 7.5A
„ rDS(on) = 21m, VGS = 4.5V, ID = 6.9A
„ High performance trench technology for extremely low
rDS(on)
„ Low gate charge
„ High power and current handling capability
„ 100% Rg Tested
„ RoHS Compliant
D1
D1
D2
D2
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
rDS(on) and fast switching speed.
Applications
„ DC/DC converters
D2 5
D2 6
Q2
4 G2
3 S2
SO-8
Pin 1
S2 G2
G1
S1
D1
D1
MOSFET Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGS
ID
EAS
PD
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (TA = 25oC, VGS = 10V, RθJA = 50oC/W)
Continuous (TA = 25oC, VGS = 4.5V, RθJA = 50oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25oC
TJ, TSTG Operating and Storage Temperature
7
8
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case (Note 2)
Thermal Resistance, Junction to Ambient (Note 2a)
Thermal Resistance, Junction to Ambient (Note 2c)
Package Marking and Ordering Information
Device Marking
FDS8978
Device
FDS8978
Package
SO-8
Reel Size
330mm
2 G1
Q1 1 S1
Ratings
30
±20
7.5
6.9
49
57
1.6
13
-55 to 150
Units
V
V
A
A
A
mJ
W
mW/oC
oC
40 oC/W
78 oC/W
135 oC/W
Tape Width
12mm
Quantity
2500 units
©2011 Fairchild Semiconductor Corporation
FDS8978 Rev. B1
1
www.fairchildsemi.com

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