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KBP202 fiches techniques PDF

Taiwan Semiconductor - Silicon Bridge Rectifiers

Numéro de référence KBP202
Description Silicon Bridge Rectifiers
Fabricant Taiwan Semiconductor 
Logo Taiwan Semiconductor 





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KBP202 fiche technique
KBP201 THRU KBP207
Features
Single Phase 2.0 AMPS. Silicon Bridge Rectifiers
Voltage Range
50 to 1000 Volts
Current
2.0 Amperes
KBP
UL Recognized File # E-96005
Glass passivated junction
Ideal for printed circuit board
Reliable low cost construction technique
results in inexpensive product
High temperature soldering guaranteed:
260 / 10 seconds at 5 lbs. ( 2.3 Kg )
tension
Small size, simple installation
Leads solderable per MIL-STD-202,
Method 208
.460(11.68)
.420(10.6)
.035(0.9)
.028(0.7)
AC
.5 (12.7)
MIN
.160(4.1)
.140(3.6)
SPACING
.600(15.24)
.560(14.22)
.153(3.9)
.146(3.7)
.050(1.27)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%
Type Number
Symbol KBP KBP KBP KBP KBP KBP KBP Units
201 202 203 204 205 206 207
Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V
Maximum RMS Voltage
VRMS 35 70 140 280 420 560 700 V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
@TA = 50
Peak Forward Surge Current, 8.3 ms Single
Half Sine-wave Superimposed on Rated
Load (JEDEC method )
VDC
I(AV)
IFSM
50 100 200 400 600 800 1000 V
2.0 A
60 A
Maximum Instantaneous Forward Voltage
@ 2.0A
VF
1.2
V
Maximum DC Reverse Current @ TA=25
at Rated DC Blocking Voltage @ TA=125
IR
10 uA
500 uA
Typical Thermal Resistance (Note)
RθJA
RθJL
25
8
/W
Operating Temperature Range
TJ
-55 to +125
Storage Temperature Range
TSTG
-55 to +150
Note: Thermal Resistance from Junction to Ambient and from Junction to Lead Mounted on P.C.B.
With 0.47 x 0.47” (12 x 12mm) Copper Pads.
- 668 -

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