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PDF UPA2739T1A Data sheet ( Hoja de datos )
| Número de pieza | UPA2739T1A | |
| Descripción | P-CHANNEL POWER MOSFET | |
| Fabricantes | Renesas | |
| Logotipo |  |
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Data Sheet
μPA2739T1A
P-channel MOSFET
–30 V, –85 A, 2.8 mΩ
R07DS0885EJ0102
Rev.1.02
Nov 28, 2012
Description
The μ PA2739T1A is P-channel MOS Field Effect Transistors designed for high current switching applications.
Features
• VDSS = −30 V (TA = 25°C)
• Low on-state resistance
⎯ RDS(on) = 2.8 mΩ MAX. (VGS = −10 V, ID = −46 A)
⎯ RDS(on) = 5.7 mΩ MAX. (VGS = −4.5 V, ID = −23 A)
• 4.5 V Gate-drive available
• Thin type surface mount package with heat spreader
• Halogen free
Ordering Information
8-pin HVSON(6051)
Part No.
μ PA2739T1A-E2-AY∗1
LEAD PLATING
PACKING
Pure Sn
Tape 3000 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in external electrode.)
Package
8-pin HVSON(6051)
0.1 g TYP.
Absolute Maximum Ratings (TA = 25°C)
Item
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (TC = 25°C)
Drain Current (pulse) ∗1
Total Power Dissipation ∗2
Total Power Dissipation (PW = 10 sec) ∗2
Total Power Dissipation (TC = 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current ∗3
Single Avalanche Energy ∗3
Symbol
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
PT3
Tch
Tstg
IAS
EAS
Ratings
−30
m20
m85
m180
1.5
4.6
83
150
−55 to +150
-40
160
Unit
V
V
A
A
W
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Ambient Thermal Resistance ∗2
Channel to Ambient Thermal Resistance ∗2
Rth(ch-A)
Rth(ch-C)
83.3
1.5
°C/W
°C/W
Notes: ∗1. PW ≤ 10 μs, Duty Cycle ≤ 1%
∗2. Mounted on a glass epoxy board of 25.4 mm x 25.4 mm x 0.8 mmt
∗3. Starting Tch = 25°C, VDD = −15 V, RG = 25 Ω, VGS = −20 → 0 V, L = 100 μH
R07DS0885EJ0102 Rev.1.02
Nov 28, 2012
Page 1 of 6
1 page  
μPA2739T1A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10,000
Ciss
1,000
Coss
Crss
VGS = 0V
f = 1.0MHz
100
-0.1 -1
-10 -100
VDS - Drain to Source Voltage - V
DYNAMIC INPUT CHARACTERISTICS
-14
-12
-10
VDD= -6V
-15V
-24V
-8
-6
-4
-2
0
0
ID=-23A
50 100 150 200
QG - Gate Charge - nC
SWITCHING CHARACTERISTICS
10000
VDD = -15V
VGS=-10V
RG=10Ω
1000
tf
td(of f )
100
tr
td(on)
10
-0.1
-1 -10
ID - Drain Current - A
-100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
Pulsed
VGS=-10V
100
-4.5V
0V
10
1
0 0.2 0.4 0.6 0.8
VF(S-D) - Source to Drain Voltage - V
1
R07DS0885EJ0102 Rev.1.02
Nov 28, 2012
Page 5 of 6
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet UPA2739T1A.PDF ] | |
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