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PDF UPA2733GR Data sheet ( Hoja de datos )
| Número de pieza | UPA2733GR | |
| Descripción | P-CHANNEL POWER MOSFET | |
| Fabricantes | NEC | |
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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
μ PA2733GR
SWITCHING
P-CHANNEL POWER MOSFET
DESCRIPTION
The μ PA2733GR is P-channel MOS Field Effect Transistor
designed for power management applications of notebook
computers and so on.
PACKAGE DRAWING (Unit: mm)
85
1, 2, 3 : Source
4 : Gate
5, 6, 7, 8: Drain
FEATURES
• Low on-state resistance
RDS(on)1 = 38 mΩ MAX. (VGS = −10 V, ID = −2.5 A)
RDS(on)2 = 53 mΩ MAX. (VGS = −4.5 V, ID = −2.5 A)
• Low Ciss: Ciss = 870 pF TYP.
• Built-in gate protection diode
• Small and surface mount package (Power SOP8)
14
5.37 MAX.
6.0 ±0.3
4.4
1.27 0.78 MAX.
0.5 ±0.2
0.8
0.10
ORDERING INFORMATION
0.40
+0.10
–0.05
0.12 M
PART NUMBER
PACKAGE
μ PA2733GR-E1
μ PA2733GR-E1-A Note
Power SOP8
Power SOP8
μ PA2733GR-E2
μ PA2733GR-E2-A Note
Power SOP8
Power SOP8
Note Pb-free (This product does not contain Pb in external electrode and other parts.)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC)
Drain Current (pulse) Note1
Total Power Dissipation Note2
Total Power Dissipation (PW = 10 sec) Note2
VDSS
VGSS
ID(DC)
ID(pulse)
PT1
PT2
−30
m20
m5
m20
1.1
2.5
V
V
A
A
W
W
Channel Temperature
Storage Temperature
Tch 150 °C
Tstg –55 to +150 °C
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Mounted on glass epoxy board of 1 inch x 1 inch x 0.8 mm
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. G17460EJ2V0DS00 (2nd edition)
Date Published November 2005 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
Downloaded from Elcodis.com electronic components distributor
2005
1 page  
1000
SWITCHING CHARACTERISTICS
100
10
1
-0.1
td (off)
tf
tr
td (on)
VDD = −15 V
VGS = −10 V
RG = 10 Ω
-1 -10
ID - Drain Current - A
-100
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
100
10
VGS = −10 V
0V
1
0.1
0.01
0
Pulsed
0.2 0.4 0.6 0.8 1 1.2
VF(S-D) - Source to Drain Voltage - V
μ PA2733GR
DYNAMIC INPUT CHARACTERISTICS
-12
-10
VDD = −24 V
-8 −15 V
−6 V
-6
-4
-2
0
0
ID = −5 A
5 10 15
QG - Gate Charge - nC
20
1000
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
100
10
0.1
di/dt = −100 A/μs
VGS = 0 V
1 10
IF - Diode Forward Current - A
100
Downloaded from Elcodis.com electronic components distributor
Data Sheet G17460EJ2V0DS
5
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet UPA2733GR.PDF ] | |
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