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Numéro de référence | 2N4339 | ||
Description | N-CHANNEL JUNCTION FIELD EFFECT TRANSISTOR | ||
Fabricant | Central Semiconductor | ||
Logo | |||
1 Page
2N4338 2N4340
2N4339 2N4341
SILICON
N-CHANNEL JFETS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N4338 Series
devices are silicon N-Channel JFETs mounted in a
hermetically sealed metal case designed for low level,
low noise amplifier applications.
MARKING: FULL PART NUMBER
TO-18 CASE
MAXIMUM RATINGS: (TA=25°C)
Gate-Drain Voltage
Gate-Source Voltage
Drain-Source Voltage
Gate Current
Power Dissipation
Operating and Storage Junction Temperature
SYMBOL
VGD
VGS
VDS
IG
PD
TJ, Tstg
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
2N4338
2N4339
SYMBOL TEST CONDITIONS
MIN MAX MIN MAX
IGSS
VGS=30V, VDS=0
- 0.1
- 0.1
IDSS
VDS=15V, VGS=0
0.2 0.6 0.5 1.5
BVGSS
IG=1.0μA
50 -
50 -
VGS(OFF)
|yfs|
|yos|
VDS=15V, ID=0.1μA
VDS=15V, f=1.0kHz
VDS=15V, f=1.0kHz
0.3 1.0
0.6 1.8
- 5.0
0.6 1.8
0.8 2.4
- 15
Ciss VDS=15V, f=1.0MHz
- 6.0
- 6.0
Crss
VDS=15V, f=1.0MHz
- 2.0
- 2.0
NF
VDS=15V, f=1.0kHz, RG=1.0MΩ - 1.0
- 1.0
50
50
50
50
325
-65 to +200
UNITS
V
V
V
mA
mW
°C
2N4340
MIN MAX
- 0.1
1.2 3.6
50 -
1.0 3.0
1.3 3.0
- 30
- 6.0
- 2.0
- 1.0
2N4341
MIN MAX
- 0.1
3.0 9.0
50 -
2.0 6.0
2.0 4.0
- 60
- 6.0
- 2.0
- 1.0
UNITS
nA
mA
V
V
mS
μS
pF
pF
dB
R1 (3-August 2016)
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Pages | Pages 3 | ||
Télécharger | [ 2N4339 ] |
No | Description détaillée | Fabricant |
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US18650VTC5A | Lithium-Ion Battery | Sony |
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