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PDF IRFD320 Data sheet ( Hoja de datos )
| Número de pieza | IRFD320 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | Vishay | |
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IRFD320, SiHFD320
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
Qg (Max.) (nC)
Qgs (nC)
Qgd (nC)
Configuration
400
VGS = 10 V
20
3.3
11
Single
1.8
D
HVMDIP
S
G
D
G
S
N-Channel MOSFET
FEATURES
• Dynamic dV/dt rating
• Repetitive avalanche rated
• For automatic insertion
RoHS
COMPLIANT
• End stackable
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertiable
case style which can be stacked in multiple combinations on
standard 0.1" pin centers. The dual drain servers as a
thermal link to the mounting surface for power dissipation
levels up to 1 W.
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
HVMDIP
IRFD320PbF
SiHFD320-E3
IRFD320
SiHFD320
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current a
Linear Derating Factor
Single Pulse Avalanche Energy b
Avalanche Current a
Repetitive Avalanche Energy a
Maximum Power Dissipation
Peak Diode Recovery dV/dt c
VGS at 10 V
TA = 25 °C
TA = 100 °C
TA = 25 °C
VDS
VGS
ID
IDM
EAS
IAR
EAR
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature) d
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = 50 V, starting TJ = 25 °C, L = 21 mH, Rg = 25 Ω, IAS = 2.0 A (see fig. 12).
c. ISD ≤ 2.0 A, dI/dt ≤ 40 A/μs, VDD ≤ VDS, TJ ≤ 150 °C.
d. 1.6 mm from case.
LIMIT
400
± 20
0.49
0.31
3.9
0.0083
48
0.49
0.10
1.0
4.0
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
S14-2355-Rev. D, 08-Dec-14
1
Document Number: 91134
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1 page  
www.vishay.com
TA, Ambient Temperature (°C)
Fig. 9 - Maximum Drain Current vs. Ambient Temperature
IRFD320, SiHFD320
Vishay Siliconix
VDS
VGS
Rg
RD
D.U.T.
10 V
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
+- VDD
Fig. 10a - Switching Time Test Circuit
VDS
90 %
10 %
VGS
td(on) tr
td(off) tf
Fig. 10b - Switching Time Waveforms
t1, Rectangular Pulse Duration (s)
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
S14-2355-Rev. D, 08-Dec-14
5
Document Number: 91134
For technical questions, contact: [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet IRFD320.PDF ] | |
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