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PDF B1568 Data sheet ( Hoja de datos )

Número de pieza B1568
Descripción PNP Transistor - 2SB1568
Fabricantes ROHM Semiconductor 
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No Preview Available ! B1568 Hoja de datos, Descripción, Manual

Transistors
Power Transistor (80V, 4A)
2SB1568
2SB1568
z Features
zExternal dimensions (Unit : mm)
1) Available in TO-220 FN package
2) Darling connection provides high
10.0
φ3.2
4.5
2.8
dc current gain (hFE)
3) Damper diode is incorporated
m4) Built in resistors between base and
emitter
o5) Two millimeters lower than TO-220 FP
.cwhich allows higher density mounting
6) Complementary pair with 2SD2399
ROHM : TO-220FN
1.2
1.3
0.8
2.54 2.54
(1) (2) (3)
0.75
(1) Base (Gate)
2.6 (2) Collector (Drain)
(3) Emitter (Sourse)
UzApplications
t4Power amplifler
ezAbsolute maximum rating (Ta=25°C)
eParameter
hCollector-base voltage
Collector-emitter voltage
SEmitter-base voltage
taCollector current
Collector dissipation
aJunction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Tj
Tstg
Limits
80
80
7
4
6
2
30
150
55 to +150
Unit
V
V
V
A(DC)
A(Pulse)
W(Ta=25°C)
W(Tc=25°C)
°C
°C
zEquivalent circuit
C
B
R1 R2
E
:R1= 3kB : Base
:R2=300C : Collector
E : Emitter
w.DzElectrical characteristics (unless otherwise noted, Ta=25°C)
Parameter
Symbol
wCollectorbase
breakdown voltage
BVCBO
wCollectoremitter
breakdown voltage
BVCEO
Collector cutoff current
BVEBO
omEmitter cutoff current
ICBO
.cDC current gain
Collectoremitter
Ubreakdown voltage
t4Collectoremitter
saturation voltage
eeTransition frequency
IEBO
hFE 1
1
VCE(sat)
fT1 2
hOutput capacitance
Cob
S1 Measured using pulse current.
www.Data2 Transition frequency of the device.
Min.
80
80
7
1000
Typ.
5000
1.0
12
35
Max.
100
3
3
10000
1.5
Unit
V
V
V
µA
mV
V
MHz
pF
Conditions
IC = −50µA
IC = −1mA
IE = −5mA
VCB = −80V
VEB = −5V
VCE= −3V, IC = −2A
IC/IB= −2A/ 4mA
VCE= −5V, IE = 0.5A, f=10MHz
VCB= −10V, IE = 0A, f=1MHz
Rev.A
1/3

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