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PDF DPG10I200PM Data sheet ( Hoja de datos )
| Número de pieza | DPG10I200PM | |
| Descripción | High Performance Fast Recovery Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
Part number
DPG10I200PM
31
DPG10I200PM
VRRM
I FAV
t rr
=
=
=
200 V
10 A
35 ns
Backside: isolated
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package: TO-220FP
● Isolation Voltage: 2500 V~
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
● Soldering pins for PCB mounting
● Base plate: Plastic overmolded tab
● Reduced weight
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125a
1 page  
DPG10I200PM
Fast Diode
30
25
TVJ = 25°C
20 125°C
IF
15
150°C
[A]
10
5
0.4
TVJ = 125°C
VR = 130 V
0.3
Qrr
0.2
[μC]
0.1
20 A
10 A
5A
12
10
8
IRR
6
[A]
4
TVJ = 125°C
VR = 130 V
2
20 A
10 A
5A
0
0.0 0.4 0.8 1.2 1.6
VF [V]
Fig. 1 Forward current
IF versus VF
2.0
0.0
0
100 200 300 400 500
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
0
0 100 200 300 400 500
-diF /dt [A/μs]
Fig. 3 Typ. reverse recov. current
IRR versus -diF /dt
1.4
1.2
1.0
0.8
Kf
0.6
IRR
0.4
0.2 Qrr
80
60
trr
40
[ns]
20
TVJ = 125°C
VR = 130 V
IF = 20 A
10 A
5A
0.0
0
40 80 120
TVJ [°C]
160
Fig. 4 Typ. dynamic parameters
Qrr, IRR versus TVJ
0
0 100 200 300 400 500
-diF /dt [A/μs]
Fig. 5 Typ. reverse recov. time
trr versus -diF /dt
12 600
10 500
8
VFR
6
[V]
4
T = 125°C
VJ
IF = 10 A
VR = 130 V
400
30t0fr
[ns]
200
2 VFR
100
tfr
00
0 100 200 300 400 500
-diF /dt [A/μs]
Fig. 6 Typ. forward recov. voltage
VFR and tfr versus diF /dt
10
TVJ = 125°C
VR = 130 V
8
10
Erec 6
[μJ] 4
2
I =5A
F
10 A
20 A
ZthJH
1
[K/W]
0
0 100 200 300 400 500
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
0.1
0.001
0.01
0.1
t [s]
1
Fig. 8 Transient thermal resistance junction to case
R [K/W]
thi
0.3474
0.633
0.5473
2.162
0.7102
10
t [s]
i
0.0003
0.0035
0.029
1.2
7.8
100
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131125a
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DPG10I200PM.PDF ] | |
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