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PDF DPG60B600LB Data sheet ( Hoja de datos )
| Número de pieza | DPG60B600LB | |
| Descripción | High Performance Fast Recovery Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFRED2
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
1~ Rectifier Bridge
DPG 60B600LB
VRRM = 600 V
IDAV = 60 A
trr = 40 ns
Part number
DPG60B600LB
456
8 = n/c
97
123
9
8
7
321
654
Backside: isolated
E72873
Features / Advantages:
• Planar passivated chips
• Very low leakage current
• Very short recovery time
• Improved thermal behaviour
• Very low Irm-values
• Very soft recovery behaviour
• Avalanche voltage rated for reliable operation
• Soft reverse recovery for low EMI/RFI
• Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
• Rectifiers in switch mode power
supplies (SMPS)
Package: SMPD
• Isolation Voltage: 3000 V~ (t = 1s)
• Industry convenient outline
• RoHS compliant
• Epoxy meets UL 94V-0
• Soldering pins for PCB mounting
• Backside: DCB ceramic
• Reduced weight
• Advanced power cycling
IXYS reserves the right to change limits, test conditions and dimensions.
© 2013 IXYS All rights reserved
Data according ot IEC 60747 and per semiconductor unless otherwise specified
20131010
1-5
1 page  
DPG 60B600LB
100
80
TVJ = 150°C
IF 60
[A ] 40
TVJ = 100°C
20
TVJ = 25°C
0
0123
V F [V ]
Fig. 1 Forward current
IF versus VF
4
600
500
400
Qr
300
[μC ]
200
TVJ = 100°C
VR = 300 V
IF = 60 A
IF = 30 A
IF = 15 A
100
0
100
Fig. 2
1000
-d iF /d t [A /μs]
Typ. reverse recov. charge
Qr versus -diF /dt
24
18
IRM
12
[A ]
6
IF = 60 A
IF = 30 A
IF = 15 A
TVJ = 100°C
VR = 300 V
0
0 200 400 600 800 1000
-d iF /d t [A /μs]
Fig. 3 Typ. peak reverse current
IRM versus -diF /dt
2.0
1.5
K f 1.0
0.5 IRM
Qr
0.0
0
40 80 120 160
T V J [°C ]
Fig. 4 Dynamic parameters
Qr, IRM versus TVJ
140
120
100
t rr
80
[n s ]
60
TVJ = 100°C
VR = 300 V
IF = 60 A
IF = 30 A
IF = 15 A
40
0 200 400 600 800
-d iF /d t [A /μs]
Fig. 5 Typ. recovery time
trr versus -diF /dt
1000
60 TVJ = 100°C
50 IF = 30 A
0.30
0.25
40
V FR
30
[V ]
20
10
VFR
0.20
0[.1μt5fsr ]
tfr 0.10
0.05
0 0.00
0 200 400 600 800 1000
-d iF /d t [A /μs]
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF /dt
2
1
Z thJ0C.1
[K /W ]
0.01
0.001
0.00001
Fig. 7
0.0001
0.001
0.01
t [s]
Transient thermal impedance junction to case
0.1
Constants for ZthJC calculation:
i Rthi (K/W)
ti (s)
1 0.465
0.0052
2 0.179
0.0003
3 0.256
0.0396
1
IXYS reserves the right to change limits, test conditions and dimensions.
© 2013 IXYS All rights reserved
Data according ot IEC 60747 and per semiconductor unless otherwise specified
20131010
5-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DPG60B600LB.PDF ] | |
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