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PDF DPG30C400HB Data sheet ( Hoja de datos )
| Número de pieza | DPG30C400HB | |
| Descripción | High Performance Fast Recovery Diode | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFRED²
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Common Cathode
Part number
DPG30C400HB
1 23
DPG30C400HB
VRRM
I FAV
t rr
= 400 V
= 2x 15 A
= 45 ns
Backside: cathode
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Package: TO-247
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20131101a
1 page  
DPG30C400HB
Fast Diode
80 0.4
70
TVJ = 125°C
30 A
VR = 270 V
60 0.3 15 A
IF 50
40
[A]
30
20
TVJ = 25°C
150°C
Qrr
0.2
[μC]
0.1
7.5 A
10
0
0.0 0.5 1.0 1.5 2.0
VF [V]
Fig. 1 Forward current
IF versus VF
2.5
0.0
0 100 200 300 400 500 600
-diF /dt [A/μs]
Fig. 2 Typ. reverse recov. charge
Qrr versus -diF /dt
12
10
IRM 8
IF = 30 A
I
F
=
15
A
IF = 7.5 A
[A] 6
4
2 TVJ = 125°C
VR = 270 V
0
0 100 200 300 400 500 600
-diF /dt [A/μs]
Fig. 3 Typ. peak reverse current
IRM versus -diF /dt
1.4
1.2
1.0
0.8
Kf
0.6
IRM
0.4
0.2 Qrr
120
100
trr 80
[ns] 60
40
TVJ = 125°C
VR = 270 V
IF = 30 A
15 A
7.5 A
0.0
0
40 80 120 160
TVJ [°C]
Fig. 4 Typ. dynamic parameters
Qrr, IRM versus TVJ
20
0 100 200 300 400 500 600
-diF /dt [A/μs]
Fig. 5 Typ. recovery time
trr versus -diF /dt
18
TVJ = 125°C
16 IF = 15 A
14 VR = 270 V
450
400
350
12
VFR 10
[V] 8
6
4
VFR
2
300
250
20t0fr
[ns]
150
100
tfr
50
00
0 100 200 300 400 500 600
-diF /dt [A/μs]
Fig. 6 Typ. peak forward voltage
VFR and tfr versus diF /dt
25
20
Erec
15
[μJ]
10
T = 125°C
VJ
VR = 270 V
I = 30 A
F
IF = 15 A
IF = 7.5 A
2.0
1.6
ZthJC
1.2
[K/W]
0.8
5 0.4
0
0 100 200 300 400 500 600
-diF /dt [A/μs]
Fig. 7 Typ. recovery energy
Erec versus -diF /dt
0.0
1
10 100 1000
t [ms]
Fig. 8 Transient thermal resistance junction to case
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
10000
20131101a
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DPG30C400HB.PDF ] | |
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