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IXYS - High Performance Fast Recovery Diode

Numéro de référence DHG10I1200PA
Description High Performance Fast Recovery Diode
Fabricant IXYS 
Logo IXYS 





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DHG10I1200PA fiche technique
DHG 10 I 1200 PA
preliminary
Sonic Fast Recovery Diode
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
VRRM =
IFAV =
t rr =
1200 V
10 A
200 ns
Part number
DHG 10 I 1200 PA
31
Backside: cathode
Features / Advantages:
Planar passivated chips
Very low leakage current
Very short recovery time
Improved thermal behaviour
Very low Irm-values
Very soft recovery behaviour
Avalanche voltage rated for reliable
operation
Soft reverse recovery for low EMI/RFI
Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
Antiparallel diode for high frequency
switching devices
Antisaturation diode
Snubber diode
Free wheeling diode
Rectifiers in switch mode power
supplies (SMPS)
Uninterruptible power supplies (UPS)
Package:
Housing: TO-220
rIndustry standard outline
rEpoxy meets UL 94V-0
rRoHS compliant
Ratings
Symbol
VRRM
IR
VF
IFAV
VF0
rF
R thJC
T VJ
Ptot
I FSM
I RM
t rr
Definition
Conditions
max. repetitive reverse voltage
reverse current
forward voltage
average forward current
VR = 1200 V
VR = 1200 V
IF = 10 A
IF = 20 A
IF = 10 A
IF = 20 A
rectangular
d = 0.5
threshold voltage
slope resistance
for power loss calculation only
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
t = 10 ms (50 Hz), sine
IF = 10 A; VR = 600 V
-diF/dt = 250 A/µs
CJ junction capacitance
VR = 600 V; f = 1 MHz
TVJ = 25 °C
TVJ = 25°C
TVJ = 125 °C
TVJ = 25°C
TVJ = 125°C
TC = 105°C
TVJ = 150 °C
TC = 25°C
TVJ = 45°C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25°C
min. typ. max.
1200
15
0.2
2.22
2.93
2.23
3.14
10
1.25
90
1.50
-55 150
85
60
9
10.5
200
350
4
Unit
V
µA
mA
V
V
V
V
A
V
m
K/W
°C
W
A
A
A
ns
ns
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2011 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20110622a

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