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Numéro de référence | DHG5I600PM | ||
Description | High Performance Fast Recovery Diode | ||
Fabricant | IXYS | ||
Logo | |||
1 Page
Sonic-FRD
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Single Diode
DHG 5 I 600PM
advanced
VRRM =
IFAV =
t rr =
600 V
5A
35 ns
Part number
DHG 5 I 600PM
31
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Backside: isolated
Package:
TO-220FPAC
● Industry standard outline
● Plastic overmolded tab for
electrical isolation
● Epoxy meets UL 94V-0
● RoHS compliant
Symbol
VRRM
IR
VF
I FAV
VF0
rF
R thJC
TVJ
Ptot
I FSM
I RM
t rr
CJ
EAS
IAR
Definition
Conditions
max. repetitive reverse voltage
reverse current
forward voltage
VR =
VR =
IF =
IF =
600 V
600 V
5A
10 A
TVJ = 25 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
average forward current
IF = 5 A
IF = 10 A
rectangular, d = 0.5
threshold voltage
slope resistance
for power loss calculation only
TVJ = 125 °C
TC = 95 °C
TVJ = 150 °C
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
reverse recovery time
junction capacitance
non-repetitive avalanche energy
repetitive avalanche current
tp = 10 ms (50 Hz), sine
IF = 5 A;
-di /dt = 100 A/µs
F
VR = 400 V
VR = 300 V; f = 1 MHz
I AS = tbd A; L = 100 µH
VA = 1.5·VR typ.; f = 10 kHz
TC = 25 °C
TVJ = 45 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 125 °C
TVJ = 25 °C
TVJ = 25 °C
Ratings
min. typ. max.
600
10
1
2.20
0.00 2.98
2.02
0.00 2.85
5
1.31
133
4.20
-55 150
30
40
2
35
tbd
tbd
tbd
Unit
V
µA
mA
V
V
V
V
A
V
mΩ
K/W
°C
W
A
A
A
ns
ns
pF
mJ
A
IXYS reserves the right to change limits, conditions and dimensions.
© 2006 IXYS all rights reserved
* Data according to IEC 60747and per diode unless otherwise specified
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Pages | Pages 2 | ||
Télécharger | [ DHG5I600PM ] |
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