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PDF DNA30ER2200IY Data sheet ( Hoja de datos )
| Número de pieza | DNA30ER2200IY | |
| Descripción | High Voltage Standard Rectifier | |
| Fabricantes | IXYS | |
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High Voltage Standard Rectifier
Single Diode
Part number
DNA30ER2200IY
31
DNA30ER2200IY
VRRM = 2200 V
I FAV
=
30 A
VF = 1.24 V
Backside: anode
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
Applications:
● Diode for main rectification
● For single and three phase
bridge configurations
Package: TO-262 (I2Pak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130123a
1 page  
DNA30ER2200IY
Rectifier
60
300
103
VR = 0 V
40
IF
250
IFSM
TVJ = 45°C
[A]
20
[A]
200
TVJ = 150°C
TVJ = 150°C
TVJ = 125°C
TVJ = 25°C
0
0.5 1.0 1.5 2.0
VF [V]
Fig. 1 Forward current versus
voltage drop per diode
50 Hz, 80% VRRM
150
0.001
0.01
0.1
1
t [s]
Fig. 2 Surge overload current
I2t
[A2s]
TVJ = 45°C
TVJ = 150°C
102
1
2 3 4 5 6 7 8 910
t [ms]
Fig. 3 I2t versus time per diode
50
40
30
Ptot
20
[W]
dc =
1
0.5
0.4
0.33
0.17
0.08
10
RthKA =
0.6 K/W
0.8 K/W
1.0 K/W
2.0 K/W
4.0 K/W
8.0 K/W
40
30
IF(AV)M
20
[A]
10
dc =
1
0.5
0.4
0.33
0.17
0.08
0
0 10 20 30 0 25 50 75 100 125 150 175 200
IF(AV)M [A]
Tamb [°C]
Fig. 4 Power dissipation versus direct output current and ambient temperature
0.8
0
0 25 50 75 100 125 150 175 200
TC [°C]
Fig. 5 Max. forward current versus
case temperature
0.6
ZthJC
0.4
[K/W]
0.2
0.0
1
10 100
t [ms]
Fig. 6 Transient thermal impedance junction to case
1000
10000
Constants for ZthJC calculation:
i Rthi (K/W)
ti (s)
1 0.03
0.0003
2 0.072
0.0065
3 0.131
0.027
4 0.367
0.105
5 0.1
0.8
IXYS reserves the right to change limits, conditions and dimensions.
© 2013 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20130123a
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet DNA30ER2200IY.PDF ] | |
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