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2N7639-GA Datasheet دیتاشیت PDF دانلود

دیتاشیت - GeneSiC - OFF Silicon Carbide Junction Transistor

شماره قطعه 2N7639-GA
شرح مفصل OFF Silicon Carbide Junction Transistor
تولید کننده GeneSiC 
آرم GeneSiC 


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2N7639-GA شرح
2N7639-GA
Normally – OFF Silicon Carbide
Junction Transistor
Features
210°C maximum operating temperature
Electrically Isolated Base Plate
Gate Oxide Free SiC Switch
Exceptional Safe Operating Area
Excellent Gain Linearity
Compatible with 5 V TTL Gate Drive
Temperature Independent Switching Performance
Low Output Capacitance
Positive Temperature Coefficient of RDS,ON
Suitable for Connecting an Anti-parallel Diode
Advantages
Compatible with Si MOSFET/IGBT Gate Drive ICs
> 20 µs Short-Circuit Withstand Capability
Lowest-in-class Conduction Losses
High Circuit Efficiency
Minimal Input Signal Distortion
High Amplifier Bandwidth
Package
RoHS Compliant
VDS
RDS(ON)
ID (Tc = 25°C)
hFE (Tc = 25°C)
=
=
=
=
600 V
60 m
32 A
80
D
G
GDS
S
TO – 257 (Isolated Base-plate Hermetic Package)
Applications
Down Hole Oil Drilling
Geothermal Instrumentation
Solenoid Actuators
General Purpose High-Temperature Switching
Amplifiers
Solar Inverters
Switched-Mode Power Supply (SMPS)
Power Factor Correction (PFC)
Table of Contents
Section I: Absolute Maximum Ratings .......................................................................................................... 1
Section II: Static Electrical Characteristics................................................................................................... 2
Section III: Dynamic Electrical Characteristics ............................................................................................ 2
Section IV: Figures .......................................................................................................................................... 3
Section V: Driving the 2N7639-GA ................................................................................................................. 6
Section VI: Package Dimensions ................................................................................................................... 9
Section VII: SPICE Model Parameters ......................................................................................................... 10
Section I: Absolute Maximum Ratings
Parameter
Drain – Source Voltage
Continuous Drain Current
Gate Peak Current
Turn-Off Safe Operating Area
Symbol
VDS
ID
IGM
RBSOA
Short Circuit Safe Operating Area
Reverse Gate – Source Voltage
Reverse Drain – Source Voltage
Power Dissipation
Operating and Storage Temperature
SCSOA
VGS
VDS
Ptot
Tj, Tstg
Conditions
VGS = 0 V
TJ = 210°C, TC = 25°C
TVJ = 210°C, IG = 1.5 A,
Clamped Inductive Load
TVJ = 210°C, IG = 1.5 A, VDS = 400 V,
Non Repetitive
TJ = 210°C, TC = 25°C
Values
600
32
2
ID,max = 32
@ VDS ≤ VDSmax
>20
30
40
172
-55 to 210
Unit
V
A
A
A
µs
V
V
W
°C
Dec 2014
http://www.genesicsemi.com/high-temperature-sic/high-temperature-sic-junction-transistors/
Pg 1 of 9

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