DataSheetWiki


1N4150W fiches techniques PDF

Kexin - SMALL SIGNAL DIODES

Numéro de référence 1N4150W
Description SMALL SIGNAL DIODES
Fabricant Kexin 
Logo Kexin 





1 Page

No Preview Available !





1N4150W fiche technique
SMD Type
SMALL SIGNAL DIODES
1N4150W
Diodes
Features
Silicon Epitaxial Planar Diode
Fast general purpose and switching.
This diods is also available in other case styles including:
the DO-35 case with the type designation 1N4150 and
the Mini-MELF case with the type disignation LL4150.
SOD-123
2.7+0.1
-0.1
Unit: mm
1.1+0.05
-0.05
3.7+0.1
-0.1
0.50
0.35
0.1max
Absolute Maximum Ratings Ta = 25
Paramater
Symbol
Peak Reverse voktage
VRM
Maximum Average Rectified Current
Io
Maximum Power Dissipation at Tamb = 25
Ptot
Maximum Forward Voltage Drop at IF = 200mA
VF
Maximum Reverse Current at VR = 50 V
IR
Maximum Reverse Recovery Time at IF = 10 to 200 mA, to 0.1 IF
Trr
Maximum Junction Temperature
Tj
Storage Temperature Range
Ts
NOTES::
(1) Valid provided that electrodes are kept at ambient temperature
Value
50
200
410(1)
1.0
100
4.0
150
-65 to+150
Unit
V
mA
mW
V
nA
ns
www.kexin.com.cn 1

PagesPages 1
Télécharger [ 1N4150W ]


Fiche technique recommandé

No Description détaillée Fabricant
1N4150 High-speed diodes NXP Semiconductors
NXP Semiconductors
1N4150 Silicon Epitaxial Planar Diode Vishay Telefunken
Vishay Telefunken
1N4150 SIGNAL DIODE Rectron Semiconductor
Rectron Semiconductor
1N4150 High Conductance Ultra Fast Diode Fairchild Semiconductor
Fairchild Semiconductor

US18650VTC5A

Lithium-Ion Battery

Sony
Sony
TSPC106

PCI Bus Bridge Memory Controller

ATMEL
ATMEL
TP9380

NPN SILICON RF POWER TRANSISTOR

Advanced Semiconductor
Advanced Semiconductor


www.DataSheetWiki.com    |   2020   |   Contactez-nous  |   Recherche