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PDF MAAP-011170 Data sheet ( Hoja de datos )
| Número de pieza | MAAP-011170 | |
| Descripción | Power Amplifier | |
| Fabricantes | MA-COM | |
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MAAP-011170
Power Amplifier
37.0 - 40.0 GHz
Features
Linear Power Amplifier
On-Chip Power Detector
Output Power Adjust
27.0 dB Small Signal Gain
+27.0 dBm P1dB Compression Point
+38.0 dBm OIP3
Lead-Free 7 mm 16-lead SMD Package
RoHS* Compliant and 260°C Reflow Compatible
Description
The MAAP-011170 is a four stage 37-40 GHz
packaged GaAs MMIC power amplifier that has a
small signal gain of 27 dB with a +38 dBm Output
Third Order Intercept. The amplifier contains an
integrated, temperature compensated, on-chip
power detector. This MMIC uses M/A-COM
Technology Solutions’ GaAs pHEMT device model
technology, and is based upon electron beam
lithography to ensure high repeatability and
uniformity.
The device comes in a RoHS compliant 7x7mm
Surface Mount Package offering excellent RF and
thermal properties. This device has been designed
for use in 38 GHz Point-to-Point Microwave Radio
applications.
Ordering Information 1
Part Number
Package
MAAP-011170
bulk quantity
MAAP-011170-TR1000
tape and reel
MAAP-011170-000SMB
evaluation module
1. Reference Application Note M513 for reel size information.
Functional Schematic
Rev. V3
Pin Configuration 2
Pin No.
Function
Pin No.
Function
1 RF Input 9 RF Output
2
Gate Bias,
Stage 1
10
Drain Bias,
Stage 3
3
Gate Bias,
Stage 2
11
Drain Bias,
Stage 2
4
Gate Bias,
Stage 3
12
Drain Bias,
Stage 1
5-6 Not Connected 13,14 Not Connected
7
Detector
Reference Output
15
Not Connected
8 Detector Output 16 Not Connected
2.The exposed pad centered on the package bottom must be
connected to RF and DC ground.
* Restrictions on Hazardous Substances, European Union Directive 2011/65/EC.
1
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
1 page  
MAAP-011170
Power Amplifier
37.0 - 40.0 GHz
Rev. V3
App Note [1] Biasing - It is recommended to bias the amplifier with Vd=4.0 V and Id=1000 mA. It is also
recommended to use active biasing to keep the currents constant as the RF power and temperature vary;
this gives the most reproducible results. Depending on the supply voltage available and the power
dissipation constraints, the bias circuit may be a single transistor or a low power operational amplifier, with
a low value resistor in series with the drain supply used to sense the current. The gate of the pHEMT is
controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do
this is -0.3V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure
to sequence the applied voltage to ensure negative gate bias is available before applying the positive drain
supply.
App Note [2] Bias Arrangement - Each DC pin (Vd1,2,3 and Vg1,2,3) needs to have DC bypass
capacitance (10 nF/1 µF) as close to the package as possible.
App Note [3] Power Detector - As shown in the schematic below, the power detector is implemented by
providing +5 V bias and measuring the difference in output voltage with standard op-amp in a differential
mode configuration.
Typical Application
5
M/A-COM Technology Solutions Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macom.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
5 Page | ||
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| PDF Descargar | [ Datasheet MAAP-011170.PDF ] | |
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