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PDF MAAP-011106 Data sheet ( Hoja de datos )
| Número de pieza | MAAP-011106 | |
| Descripción | Power Amplifier | |
| Fabricantes | MA-COM | |
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MAAP-011106
Power Amplifier,
71 - 86 GHz
Features
4 Stage Power Amplifier for E Band
20 dB Gain
15 dB input and output match
25 dBm saturated output power
30 dBm OIP3
Variable gain with adjustable bias
Integrated detector
Bare die
RoHS* compliant and 260°C reflow compatible
HBM ESD rating of 100 V
Size: 3780x2500x50µm
Description
The MAAP-011106 is a bare die power amplifier that
operates from 71 - 86 GHz. The amplifier provides
20 dB small signal gain. The input and output are
matched to 50 Ω with bond wires to external board.
It is designed for use as a power amplifier stage in
transmit chains and is ideally suited for E band point
to point radios.
Each device is 100% RF tested to ensure
performance compliance. The part is fabricated
using an efficient pHEMT process.
Ordering Information
Part Number
Package
MAAP-011106-DIE
Die in Vacuum release gel
pack
Chip Device Layout
VD1
1
VD2
2
VD3
3
VD4
4
Rev. V1
RFIN 16
6 RFOUT
14
VG1
13
VG2
12
VG3
11 10 9 8
VG4 GNDDET VREF VDET
Pad Configuration
Pad No.
Function
1 VD1
2 VD2
3 VD3
4 VD4
5 GND
6 RFOUT
7 GND
8 VDET
Pad No.
9
10
11
12
13
14
15
16
17
Function
VREF
GNDDET
VG4
VG3
VG2
VG1
GND
RFIN
GND
1 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to
make changes to the product(s) or information contained herein without notice.
1 page  
MAAP-011106
Power Amplifier,
71 - 86 GHz
Calibration Plane
All data was measured on die with 200 µm pitch
probes. The calibration plane is at the middle of the
through, 178.5 µm from the middle of the RF pad.
Rev. V1
App Note [3] Wire Bonding - The loop height of the
RF bonds should be minimized. Where the die is
mounted above the PCB, it is recommended to use
Reverse Ball-Stitch-on-Ball bonds (BSOB). If the die
is mounted inside a cavity on the board, Forward
Loop bonding may result in a lower loop height.
V-shape RF bond with two wires (diameter = 25 µm
is recommended for optimum RF performance.
RF bond wire length to be minimized to reduce the
inductance effect. Simulations suggest no more than
300 µm. Substrate RF pad can be optimised to
improve the Microstrip to MMIC bond transition as
shown in the example below.
App Note [1] Biasing - All gates should be pinched
-off (VG < -1 V) before applying drain voltage (VD =
4 V). Then the gate voltages can be increased until
the desired quiescent drain current is reached in
each stage. The recommended quiescent bias is VD
= 4 V, ID1 = 60 mA, ID2 = 120 mA, ID3 = 240 mA
and ID4 = 300 mA. The performance in this
datasheet has been measured with fixed gate
voltage and no drain current regulation under large
signal operation. It is also possible to regulate the
drain current dynamically, to limit the DC power
dissipation under RF drive. To turn off the device,
the turn on bias sequence should be followed in
reverse.
App Note [2] Bias Arrangement - Each DC pin
(VD1,2,3,4 and VG1,2,3,4) needs to have bypass
capacitance (120 pF and10 nF) mounted as close to
the MMIC as possible.
5
• North America Tel: 800.366.2266 • Europe Tel: +353.21.244.6400
• India Tel: +91.80.43537383
• China Tel: +86.21.2407.1588
Visit www.macomtech.com for additional data sheets and product information.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to
make changes to the product(s) or information contained herein without notice.
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MAAP-011106.PDF ] | |
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