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Número de pieza | MAGX-000035-015000 | |
Descripción | Power Transistor | |
Fabricantes | MA-COM | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de MAGX-000035-015000 (archivo pdf) en la parte inferior de esta página. Total 7 Páginas | ||
No Preview Available ! MAGX-000035-015000
MAGX-000035-01500S
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Features
GaN on SiC Depletion Mode Transistor
Common-Source Configuration
Broadband Class AB Operation
Thermally Enhanced Package (Flanged: Cu/W,
Flangeless: Cu)
RoHS* Compliant
+50V Typical Operation
MTTF = 600 years (TJ < 200°C)
Primary Applications
Commercial Wireless Infrastructure
(WCDMA, LTE, WiMAX)
Air Traffic Control Radar - Commercial
Weather Radar - Commercial
Military Radar - Military
Public Radio
Industrial, Scientific and Medical
SATCOM
Instrumentation
Description
The MAGX-000035-01500X is a gold-metalized
unmatched Gallium Nitride (GaN) on Silicon Carbide
RF power transistor suitable for a variety of RF power
amplifier applications. Using state of the art wafer
fabrication processes, these high performance
transistors provide high gain, efficiency, bandwidth,
and ruggedness over multiple octave bandwidths for
today’s demanding application needs.
The MAGX-000035-01500X is constructed using a
thermally enhanced flanged (Cu/W) or flangeless
(Cu) ceramic package which provides excellent
thermal performance. High breakdown voltages allow
for reliable and stable operation in extreme
mismatched load conditions unparalleled with older
semiconductor technologies.
Rev. V1
MAGX-000035-015000 (Flanged)
MAGX-000035-01500S (Flangeless)
Ordering Information
Part Number
Description
MAGX-000035-015000 Flanged, Bulk Packaging
MAGX-000035-01500S Flangeless, Bulk Packaging
MAGX-L20035-015000
MAGX-L20035-01500S
Sample Board
(1.2 - 1.4 GHz, Flanged)
Sample Board
(1.2 - 1.4 GHz, Flangeless)
1 * Restrictions on Hazardous Substances, European Union Directive 2002/95/EC.
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
1 page MAGX-000035-015000
MAGX-000035-01500S
GaN on SiC HEMT Pulsed Power Transistor
15 W, DC - 3.5 GHz
Typical Performance Curves
Application Section
1.2 - 1.4 GHz, 1 ms Pulse, 10% Duty, VDD = 50 V, Idq = 15 mA, TA = 25°C
Output Power and Gain Vs. Input Power
Rev. V1
Drain Efficiency Vs. Output Power
5
M/A-COM Technology Solutions Inc. (MACOM) and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Visit www.macomtech.com for additional data sheets and product information.
• North America Tel: 800.366.2266 / Fax: 978.366.2266
• Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300
• Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298
5 Page |
Páginas | Total 7 Páginas | |
PDF Descargar | [ Datasheet MAGX-000035-015000.PDF ] |
Número de pieza | Descripción | Fabricantes |
MAGX-000035-015000 | Power Transistor | MA-COM |
MAGX-000035-01500S | Power Transistor | MA-COM |
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