|
|
Numéro de référence | ICTE-36 | ||
Description | TVS Diode (Transient Voltage Suppressor) | ||
Fabricant | Microsemi | ||
Logo | |||
1 Page
SCOTTSDALE DIVISION
ICTE-5 thru ICTE-45C, e3
TRANSIENT VOLTAGE SUPPRESSOR
DESCRIPTION
The ICTE-5 through ICTE-45C series of Transient Voltage
Suppressors (TVSs) are designed for the protection of integrated
circuits that require very low Clamping Voltages (VC) during a
transient threat. Due to their very fast response time, protection
level and high Peak Pulse Power (PPP) capability, they are extremely
effective in providing protection against line transients generated by:
voltage reversals, capacitive or inductive load switching,
electromechanical switching, electrostatic discharge and
electromagnetic coupling.
APPEARANCE
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
FEATURES
• This series of TVS devices is designed to protect
Bipolar, MOS and Schottky improved integrated
circuits.
• Transient protection for CMOS, MOS, Bipolar,
ICS (TTL, ECL, DTL, RTL and linear functions)
• 5.0 to 45 volts
• Low clamping ratio
• RoHS Compliant devices available by adding “e3”
suffix
APPLICATIONS / BENEFITS
• These transient voltage suppressors are
designed for the protection of integrated
circuits. Characterized by a very low
clamping voltage together with a low standoff
voltage, they afford a high degree of
protection to: TTL, ECL, DTL, MOS, CMOS,
VMOS, HMOS, NMOS and static memory
circuits.
MAXIMUM RATINGS
• 1500 Watts of Peak Pulse Power (PPP)
dissipation at 25oC and 10x1000μs
• tclamping (0 volts to V(BR) min):
<100 ps theoretical for unidirectional and <5 ns
for bidirectional
• Operating and Storage temperatures: -65oC to
+150oC.
• Forward surge rating: 200 amps, 1/120 second
at 25oC. (Applies to Unidirectional or single
direction only).
• Steady State power dissipation: 5 watts.
• Repetition rate (duty cycle): .05%
• Clamping Factor: 1.33 @ Full rated power.
1.20 @ 50% rated power.
• Clamping Factor: The ratio of the actual VC
(Clamping Voltage) to the actual V(BR)
(Breakdown Votlage) as measured on a
specific device.
MECHANICAL AND PACKAGING
• CASE: Void-free, transfer molded
thermosetting epoxy body meeting UL94V-0
• FINISH: Tin-lead or RoHS Compliant matte-
Tin plating solderable per MIL-STD-750,
method 2026
• POLARITY: Cathode connected to case and
marked. Bidirectional not marked.
• WEIGHT: 1.5 grams (approx.)
• MOUNTING POSITION: Any
• See package dimension on last page
Copyright © 2008
10-09-2008 REV B
Microsemi
Scottsdale Division
8700 E. Thomas Rd. PO Box 1390, Scottsdale, AZ 85252 USA, (480) 941-6300, Fax: (480) 947-1503
Page 1
|
|||
Pages | Pages 3 | ||
Télécharger | [ ICTE-36 ] |
No | Description détaillée | Fabricant |
ICTE-36 | Silicon Avalanche Diodes | Littelfuse |
ICTE-36 | GLASS PASSIVATED JUNCTION TRANSIENT VOLTAGE SUPPRESSOR | MDE |
ICTE-36 | 1500W Transient Voltage Suppressor | TAITRON |
ICTE-36 | TVS Diode (Transient Voltage Suppressor) | Microsemi |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
www.DataSheetWiki.com | 2020 | Contactez-nous | Recherche |