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35N60C3 fiches techniques PDF

Infineon - SPW35N60C3

Numéro de référence 35N60C3
Description SPW35N60C3
Fabricant Infineon 
Logo Infineon 





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35N60C3 fiche technique
CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv /dt rated
• Ultra low effective capacitances
• Improved transconductance
Product Summary
V DS @ T j,max
R DS(on),max
ID
SPW35N60C3
650 V
0.1
34.6 A
PG-TO247
Type
SPW35N60C3
Package
PG-TO247
Ordering Code
Q67040-S4673
Marking
35N60C3
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Continuous drain current
Pulsed drain current1)
Avalanche energy, single pulse
Avalanche
energy,
repetitive
t
1),2)
AR
Avalanche
current,
repetitive
t
1)
AR
Symbol Conditions
I D T C=25 °C
T C=100 °C
I D,pulse T C=25 °C
E AS I D=17.3 A, V DD=50 V
E AR I D=34.6 A, V DD=50 V
I AR
Drain source voltage slope
dv /dt
I D=34.6 A,
V DS=480 V, T j=125 °C
Value
34.6
21.9
103.8
1500
1.5
34.6
50
Unit
A
mJ
A
V/ns
Gate source voltage
Power dissipation
Operating and storage temperature
Reverse diode dv/dt 6)
V GS static
V GS AC (f >1 Hz)
P tot T C=25 °C
T j, T stg
dv/dt
±20
±30
313
-55 ... 150
15
V
W
°C
V/ns
Rev. 2.5
Page 1
2008-02-11
Please note the new package dimensions arccording to PCN 2009-134-A

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