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KDB6030L fiches techniques PDF

Kexin - N-Channel Logic Level Enhancement Mode Field Effect Transistor

Numéro de référence KDB6030L
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
Fabricant Kexin 
Logo Kexin 





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KDB6030L fiche technique
SMD Type
TransistIoCrs
N-Channel Logic Level Enhancement
Mode Field Effect Transistor
KDB6030L
Features
52A, 30 V. RDS(ON) = 0.0135 @ VGS = 10 V
RDS(ON) = 0.020 @ VGS = 4.5 V
Low gate charge (typical 34 nC).
Low Crss (typical 175 pF).
Fast switching speed.
TO-263
+0.2
4.57+0.1 -0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54 5.08+0.2
-0.2 +0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
11Ggaattee
22Ddrraaiinn
33Ssoouurrccee
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous
Drain Current Pulsed
Power dissipation @ TC=25
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Symbol
VDSS
VGS
ID
PD
PD
TJ, TSTG
R JC
R JA
Rating
30
20
52
156
75
0.5
-65 to 175
2
62.5
Unit
V
V
A
A
W
W/
/W
/W
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