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KDB5690 fiches techniques PDF

Kexin - N-Channel PowerTrench MOSFET

Numéro de référence KDB5690
Description N-Channel PowerTrench MOSFET
Fabricant Kexin 
Logo Kexin 





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KDB5690 fiche technique
SMD Type
TransistIoCrs
N-Channel PowerTrenchTMMOSFET
KDB5690
Features
32 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 V
RDS(ON) = 0.032 @ VGS = 6 V
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
High performance trench technology for extremely low RDS(ON).
175 maximum junction temperature rating.
TO-263
+0.2
4.57+0.1 -0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54 5.08+0.2
-0.2 +0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
11Ggaattee
22Ddrraaiinn
33Ssoouurrccee
Absolute Maximum Ratings Ta = 25
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current Continuous
Drain Current Pulsed
Power dissipation @ TC=25
Derate above 25
Operating and Storage Temperature
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
Symbol
VDSS
VGS
ID
PD
PD
TJ, TSTG
R JC
R JA
Rating
60
20
32
100
58
0.4
-65 to 175
2.6
62.5
Unit
V
V
A
A
W
W/
/W
/W
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