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Numéro de référence | FDB3632 | ||
Description | N-Channel PowerTrench MOSFET | ||
Fabricant | Kexin | ||
Logo | |||
1 Page
SMD Type
MOSFET
N-Channel PowerTrench MOSFET
KDB3632(FDB3632)
Features
rDS(ON) = 7.5m (Typ.), VGS = 10V, ID = 80A
Qg(tot) = 84nC (Typ.), VGS = 10V
Low Miller Charge
Low QRR Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
TO-263
+0.2
4.57+0.1 -0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current-Continuous TC 111
TA=25
Power dissipation
Derate above 25
Thermal Resistance Junction to Ambient
Thermal Resistance, Junction-to-Case
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
PD
RèJA
RèJC
Tch
Tstg
Rating
100
20
80
12
310
2.07
43
0.48
175
-55 to +175
Unit
V
V
A
A
W
W/
/W
/W
www.kexin.com.cn 1
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Pages | Pages 2 | ||
Télécharger | [ FDB3632 ] |
No | Description détaillée | Fabricant |
FDB3632 | N-Channel PowerTrench MOSFET 100V/ 80A/ 9m | Fairchild Semiconductor |
FDB3632 | N-Channel PowerTrench MOSFET | Kexin |
US18650VTC5A | Lithium-Ion Battery | Sony |
TSPC106 | PCI Bus Bridge Memory Controller | ATMEL |
TP9380 | NPN SILICON RF POWER TRANSISTOR | Advanced Semiconductor |
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