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Numéro de référence | FDB2570 | ||
Description | N-Channel PowerTrench MOSFET | ||
Fabricant | Kexin | ||
Logo | |||
1 Page
SMD Type
MOSFET
150V N-Channel PowerTrench MOSFET
KDB2570(FDB2570)
Features
22 A, 150 V. RDS(ON) = 80 m @ VGS = 10 V
RDS(ON) = 90 m @ VGS = 6 V
Low gate charge
Fast switching speed
High performance trench technology for extremely
low RDS(ON)
TO-263
+0.2
4.57+0.1 -0.2
1.27-0.1
Unit: mm
1.27+0.1
-0.1
0.1max
2.54+0.2
-0.2
5.08+0.1
-0.1
0.81+0.1
-0.1
2.54
0.4+0.2
-0.2
1 Gate
2 Drain
3 Source
Absolute Maximum Ratings Ta = 25
Parameter
Drain to source voltage
Gate to source voltage
Drain current-Continuous
Drain current-Pulsed
Power dissipation
Derate above 25
Thermal Resistance Junction to Ambient
Thermal Resistance, Junction-to-Case
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
IDP
PD
RèJA
RèJC
Tch
Tstg
Rating
150
20
22
50
93
0.63
62.5
1.6
175
-55 to +175
Unit
V
V
A
A
W
W/
/W
/W
www.kexin.com.cn 1
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Pages | Pages 2 | ||
Télécharger | [ FDB2570 ] |
No | Description détaillée | Fabricant |
FDB2570 | 150V N-Channel PowerTrench MOSFET | Fairchild Semiconductor |
FDB2570 | N-Channel PowerTrench MOSFET | Kexin |
FDB2572 | N-Channel PowerTrench MOSFET 150V/ 29A/ 54m | Fairchild Semiconductor |
FDB2572 | N-Channel PowerTrench MOSFET | Kexin |
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