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PDF FPD6836P70 Data sheet ( Hoja de datos )
| Número de pieza | FPD6836P70 | |
| Descripción | LOW NOISE HIGH FREQUENCY PACKAGED PHEMT | |
| Fabricantes | Filtronic | |
| Logotipo |  |
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FPD6836P70
LOW NOISE HIGH FREQUENCY PACKAGED PHEMT
`
FEATURES:
PACKAGE:
• 22 dBm Output Power (P1dB)
• 15 dB Power Gain (G1dB) at 5.8 GHz
• 0.8 dB Noise Figure at 5.8 GHz
• 32 dBm Output IP3 at 5.8 GHz
• 45% Power-Added Efficiency at 5.8 GHz
• Useable Gain to 18 GHz
Datasheet v3.0
GENERAL DESCRIPTION:
The FPD6836P70 is a low parasitic, surface
mountable packaged depletion mode
pseudomorphic High Electron Mobility
Transistor (pHEMT) optimised for low noise,
high frequency applications.
TYPICAL APPLICATIONS:
• Gain blocks and medium power stages
• WiMax (2-11GHz)
• WLAN 802.11a (5.8GHz)
• Point-to-Point Radio (to 18GHz)
ELECTRICAL SPECIFICATIONS:
PARAMETER
SYMBOL
Power at 1dB Gain Compression
P1dB
Small Signal Gain
SSG
Power-Added Efficiency
PAE
Maximum Stable Gain (S21/S12)
f = 12 GHz
f = 18 GHz
Noise Figure
Output Third-Order Intercept Point
MSG
NF
IP3
CONDITIONS
VDS = 5 V; IDS = 55mA
VDS = 5 V; IDS = 55mA
VDS = 5 V; IDS = 55mA
POUT = P1dB
VDS = 5 V; IDS = 55mA
VDS = 5 V; IDS = 55mA,
VDS = 5V; IDS = 55mA
POUT = 10 dBm SCL
MIN
14
TYP
22
16
45
MAX UNITS
dBm
dB
%
15
12
0.8 dB
32 dBm
Saturated Drain-Source Current
IDSS
VDS = 1.3 V; VGS = 0 V
90 105 135
Maximum Drain-Source Current
IMAX
VDS = 1.3 V; VGS ≅ +1 V
215
Transconductance GM VDS = 1.3 V; VGS = 0 V
140
Gate-Source Leakage Current
IGSO
VGS = -5 V
1 10
Pinch-Off Voltage
|VP|
VDS = 1.3 V; IDS = 0.2 mA
0.7 1.0 1.3
Gate-Source Breakdown Voltage
|VBDGS|
IGS = 0.36mA
12 14
Gate-Drain Breakdown Voltage
|VBDGD|
IGD = 0.36 mA
14.5 16
Thermal Resistance
RθJC
275
Note: TAMBIENT = 22°C; RF specification measured at f = 5.8 GHz using CW signal (except as noted)
mA
mA
mS
µA
V
V
V
°C/W
Tel: +44 (0) 1325 301111
1
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
1 page  
REFERENCE DESIGN 5.15 TO 5.85 GHZ:
FPD6836P70
Datasheet v3.0
FREQUENCY GHZ
Gain
N.F.
P1dB
IP3
S11
S22
Vd
Vg
dB
dB
dBm
dBm
dB
dB
V
V
Id mA
5.5
16
1.0
19.5
30
-6
-26
5
-0.4 to -0.6
55
20
15
10
5
0
-5
-10
-15
-20
-25
-30
2
FPD6836P70 5.5GHz Eval Board Biased @ 5V, 55mA
DB(|S(2,1)|)
DB(|S(1,1)|)
DB(|S(2,2)|)
3456789
Frequency (GHz)
SCHEMATIC
MTEE
MTEE
M LIN
ID=TL22
MLIN
ID=TL21
ID=TL19
W1=150 mil ID=TL17
W1=150 mil
CAP
CAP
ID=C2
C=33 pF
PORT
MTEE
ID=TL10
W1=45 mil
W2=70 mil
W3=45 mil
12
3
MLIN
ID=TL2
W=70 mil
L=420 mil
MTEE
ID=TL9
W1=70 mil
W2=40 mil
W3=40 mil
12
3
MLIN
ID=TL3
W=40 mil
L=100 mil
W=100 mil
L=100 mil
W2=100 mil
W3=220 mil
W=150 mil W2=45 mil
L=120 mil W3=45 mil
21
2
3
12
3
1 SUBCKT
ID=Q1
NET="FET"
M LE F
MLIN
ID=C4
C=33 pF
PORT
P=3
Z=50 Ohm
P=1
Z=50 Ohm
RES
ID=R1
R=20 Ohm
MLIN
ID=TL6
W=45 mil
L=30 mil
MLEF
ID=TL1
W=40 mil
L=190 mil
ID=TL11
W=220 mil
L=380 mil
ID =TL 16
W=5 mil
L=310 mil
MRSTUB2
ID=TL20
Ri=20 mil
Ro=268 mil
Theta=90 Deg
M LIN
ID=TL5
MRST UB2
ID =TL 8
CAP
ID=C 5
C=33 pF
MLIN
ID =TL 14
W=50 mil
L=100 mil
W=5 mil
Ri=20 mil
L=280 mil
Ro=350 mil
Theta=90 Deg
CAP
ID=C7
MLIN
ID=TL15
C=1000000 pF
W=50 mil
MLIN
ID=TL4
W=50 mil
L=100 mil
CAP
ID=C1
C=33 pF
L=50 mil
DCVS
ID=VG
V=-0.5 V
DCVS
ID=VD
V=5 V
Tel: +44 (0) 1325 301111
5
Specifications subject to change without notice
Filtronic Compound Semiconductors Ltd
Fax: +44 (0) 1325 306177
Email: [email protected]
Website: www.filtronic.com
5 Page | ||
| Páginas | Total 9 Páginas | |
| PDF Descargar | [ Datasheet FPD6836P70.PDF ] | |
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