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PDF TDM4953 Data sheet ( Hoja de datos )
| Número de pieza | TDM4953 | |
| Descripción | P-Channel Enhancement Mode MOSFET | |
| Fabricantes | Techcode | |
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P-Channel Enhancement Mode Power MOSFET
Datasheet
TDM4953
DESCRIPTION
The TDM4953 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 4.5V. This device is suitable for use as a
load switch or in PWM applications.
GENERAL FEATURES
● VDS = -30V,ID = -5.1A
RDS(ON) < 85mΩ @ VGS=-4.5V
RDS(ON) < 53mΩ @ VGS=-10V
● High Power and current handing capability
● Lead free product is acquired
● Surface Mount Package
D1 D2
G1 G2
S1 S2
Schematic diagram
Marking and pin Assignment
Application
●PWM applications
●Load switch
●Power management
SOP-8 top view
Package Marking And Ordering Information
Device Marking
Device
Device Package
TDM4953
TDM4953
SOP-8
Reel Size
Ø330mm
Tape width
12mm
Quantity
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Pulsed (Note 1)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
TJ,TSTG
Limit
-30
±20
-5.1
-20
2.5
-55 To 150
Unit
V
V
A
A
W
℃
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2)
RθJA
50 ℃/W
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
BVDSS
IDSS
VGS=0V ID=-250μA
VDS=-24V,VGS=0V
Min Typ Max
-30
-1
October, 20, 2010. Techcode Semiconductor Limited www.techcodesemi.com
1
Unit
V
μA
1 page  
P-Channel Enhancement Mode Power MOSFET
Datasheet
TDM4953
Vds Drain-Source Voltage (V)
Figure 13 Safe Operation Area
Square Wave Pluse Duration(sec)
Figure 14 Normalized Maximum Transient Thermal Impedance
October, 20, 2010. Techcode Semiconductor Limited www.techcodesemi.com
5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet TDM4953.PDF ] | |
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